In this work, the results of the research carried out on degradation mechanisms of c-SI PV modules after > 10 years of exposure in a Hot and humid climate in Mexico are presented. Degradation analysis using visual inspection, electrical performance, EL image, and IR was performed. 1-measurement analysis was implemented to determine the degradation rate per year. The Pmax degradation rate obtained was 1:41%/yr. The results presented indicate that most of the electrical degradation is due FF drop (increased series resistance) among other details. The aim of this work is to provide information regarding the long term reliability and degradation rate of c-Si modules in the hot and humid climate in Mexico.
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