Laser direct writing lithography (LDWL) technology has been widely adopted in chip manufacturing due to its cost-effectiveness and high flexibility[1]. However, the non-uniform distribution of light field intensity can significantly impact exposure results, potentially leading to wafer rework and increased production costs[2]. This study investigates the effects of light field intensity distribution on exposure performance using 550 nm laser direct writing technology. To optimize exposure results, a light field homogenization device based on a microlens array was employed. Comparative analysis revealed a substantial improvement in lithography outcomes following homogenization. This paper highlights the critical role of light field intensity distribution in determining exposure quality, providing valuable insights for the advancement of LDWL systems and optimizing exposure processes.
Atomic layer deposition (ALD) technology is a self-limiting film deposition process that grows films on substrates through repeated process cycles of precursor dosing, purge, co-reactant dosing and purge. This technology is widely utilized in advanced technology node processes due to its merits of excellent step coverage and atomic scale film thickness control. However, as the industry moves to three-dimensional (3D) device architectures, ALD faces emerging challenges such as the bottle neck phenomenon in extremely high aspect ratio structure with nanometer scale trench or hole open. ALD modeling provides insights into the underlying mechanisms and help engineers optimize the process. There has been research on different kind of ALD process models on film conformity, growth profile and saturation behavior at multiscale from reactor to micro-feature and molecular level. Angel Yanguas-Gil et al. proposed a reactor scale model which discussed the ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor. Adomaitis et al. presented a multiscale model to describe the reactant transport in a high aspect ratio nanopore and growth of ALD film based on continuum and Monte Carlo model. In this work, we propose an ALD model in order to simulate the spatial ALD process, coupling with surface reaction kinetics theory and hydrodynamics model. Firstly, we analyze and model the adsorption process of precursor molecules and co-reactant molecules, as well as their transport mechanism in ALD reactor chamber. Secondly, we discuss how the substrate temperature, precursor and co-reactant partial pressure, and reaction probabilities influence coverage distribution and growth per cycle in spatial ALD process. This model enables the possibility of spatial ALD process parameter optimization in an efficient and economy way.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.