Prof. Daniel F. Feezell Profile

Prof. Daniel F. Feezell

Associate Professor at Univ of New Mexico

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Author

Publications (16)

Proceedings Article | 12 March 2024 Presentation

Overcoming efficiency droop and hue shift in green and red nitride LEDs: insights from computational modeling

Nick Pant, Xuefeng Li, Daniel Feezell, Rob Armitage, Emmanouil Kioupakis

Proceedings Volume PC12880, PC1288001 (2024) https://doi.org/10.1117/12.3001035

KEYWORDS: Light emitting diodes, Quantum wells, Quantum emitters, Computational modeling, Indium, Quantum enhancement, Quantum efficiency, Design and modelling, Quantum technology applications, Quantum modeling

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Proceedings Article | 21 March 2023 Presentation

Carrier dynamics of polar, semipolar, and nonpolar InGaN/GaN LEDs measured by small-signal electroluminescence

Daniel Feezell, Arman Rashidi, Xuefeng Li, Mohsen Nami, Morteza Monavarian, Elizabeth DeJong, Robert Armitage

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2651482

KEYWORDS: Light emitting diodes, Carrier dynamics, Electroluminescence, Modulation, Solid state lighting, Optical testing, Optical communications, Epitaxy, Cladding

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Proceedings Article | 3 August 2021 Presentation

Low refractive cladding in III-nitride photonics

Ganapathi Subramania, Nicholas Karl, Keshab Sapkota, George Wang, Igal Brener, Zachary Meinelt, Daniel Feezell

Proceedings Volume 11796, 117960C (2021) https://doi.org/10.1117/12.2596419

KEYWORDS: Cladding, Photonics, Gallium nitride, Refractive index, Photonic crystals, Nanowires, Laser optics, Etching, Electrochemical etching, Visible radiation

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Proceedings Article | 2 March 2020 Presentation + Paper

High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions

Josh Brown, Satya Barik, Qian Gao, Brad Siskavich, Marie Wintrebert-Fouquet, Alanna Fernandes, Patrick Chen, Mahmoud Behzadirad, Ashwin Rishinaramangalam, Daniel Feezell, Ian Mann

Proceedings Volume 11262, 112620R (2020) https://doi.org/10.1117/12.2548261

KEYWORDS: Cladding, Doping, Resistance, Light emitting diodes, Magnesium, Gallium nitride, Absorption, Semiconductor lasers, Silicon, Refractive index

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Proceedings Article | 16 February 2020 Presentation + Paper

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Saadat Mishkat-Ul-Masabih, Andrew Aragon, Morteza Monavarian, Ting Luk, Daniel Feezell

Proceedings Volume 11280, 112800I (2020) https://doi.org/10.1117/12.2545030

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Gallium nitride, Resistance, Refractive index, Etching, Reflectivity, Dielectrics, Semiconducting wafers, Distributed Bragg reflectors

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Proceedings Article | 17 September 2018 Presentation

III-N nanowire atomic force cantilevers for ultra-vertical-wall scanning-probe, scanning-tunneling, and near-field microscopy (Conference Presentation)

Tito Busani, Steven Brueck, Daniel Feezell

Proceedings Volume 10720, 107200H (2018) https://doi.org/10.1117/12.2326712

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The steady advance of nanotechnology from investigation to application and to manufacturing is increasing the demands on nanoscale metrology and lithography. As dimensions shrink to the nano-scale, the available metrologies, necessary for any advanced manufacturing process, become limited. Optical metrology faces resolution limits associated with the large size of the photon relative to the nanostructure. Interference techniques offer sub-wavelength resolution, but at the expense of experimental and signal processing complexity. Electron and ion microscopies (SEM, TEM, FIB, etc.) offer resolution but require high vacuum and are generally unavailable for in-line manufacturing applications. Scanning probe techniques such as atomic force microscopy (AFM), scanning tunneling microscopy (STM), and near-field scanning optical microscopy (NSOM) are very attractive, yet, still unreliable to produce ideal results. For example, AFM, commercial tips are often pyramidal, resulting in significant artifacts requiring complex and uncertain deconvolution of the data. For STM and STL (scanning-tunneling lithography), amorphous/polycrystalline metal tips are the dominant commercial technology but are subject to erosion and wear. For NSOM, metal tips require a complex alignment - optical fibers offer an alternative but are difficult to combine with AFM and STM functionality. To overcome to the above-mentioned problems, we have developed a single nanowire probe systems, based on single crystal III-N semiconductors. Uniform GaN nanowire arrays, formed thought a combination of wet and dry etch of MOCVD GaN films, were achieved over a large area (>105 μm2) with an aspect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (<1 nm), allowing metrology of vertical structures with no artifact correction. Doping, during MOCVD film growth, controlled the conductivity of the GaN. Studies of the etching mechanism for different doping level are also reported. Optical emission properties of the 65 nm radius and 2 micron length GaN, mounted on an AFM tip shows a lasing at 365 nm with a line width of 0.15 nm and a Q-factor of 1139-2443. Our results show that fabrication of high-quality GaN nanowire arrays with adaptable aspect ratio and large-area uniformity is feasible through a top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate. Indeed we will also present the state of the art results of these nanowires in AFM and STM metrology as well in field emission and scanning tunneling lithography and NSOM and demonstrate as, such a single wide-bandgap tip technology offers the functionality and versatility of several incumbent technologies in one single, universal, system.

Proceedings Article | 17 September 2018 Presentation

High-speed GaN-based micro-scale light-emitting diodes for visible-light communication (Conference Presentation)

Daniel Feezell, Morteza Monavarian, Arman Rashidi, Mohsen Nami, Andrew Aragon

Proceedings Volume 10754, 1075407 (2018) https://doi.org/10.1117/12.2323266

KEYWORDS: Light emitting diodes, Modulation, Telecommunications, Data communications, Solid state lighting, Wireless communications, Polarization, Gallium nitride

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Proceedings Article | 7 September 2018 Presentation + Paper

Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices

Isaac Stricklin, Morteza Monavarian, Andrew Aragon, Greg Pickrell, Mary Crawford, Andrew Allerman, Andrew Armstrong, Daniel Feezell

Proceedings Volume 10754, 1075402 (2018) https://doi.org/10.1117/12.2322005

KEYWORDS: Diodes, Gallium nitride, Silicon, Oxygen, Metalorganic chemical vapor deposition, Carbon

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Proceedings Article | 14 March 2018 Presentation

Fabrication of InGaN LEDs on flexible metal foils (Conference Presentation)

Vladimir Matias, Christopher Sheehan, Daniel Koleske, Brendan Gunning, Ashwin Rishinaramangalam, Daniel Feezell

Proceedings Volume 10554, 1055406 (2018) https://doi.org/10.1117/12.2294597

KEYWORDS: Light emitting diodes, Metals, Indium gallium nitride, Gallium nitride, Sapphire, Ion beams, Deposition processes, Epitaxy, Silicon, Patterned sapphire substrate

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Proceedings Article | 3 November 2016 Presentation

GaN nanowire tip for high aspect ratio nano-scale AFM metrology (Conference Presentation)

Mahmoud Behzadirad, Noel Dawson, Mohsen Nami, Ashwin Rishinaramangalam, Daniel Feezell, Tito Busani

Proceedings Volume 9927, 99270N (2016) https://doi.org/10.1117/12.2237892

KEYWORDS: Gallium nitride, Silicon, Metrology, Metalorganic chemical vapor deposition, Nanoparticles, Atomic force microscopy, Silicon carbide, Gold, Carbon, Nanowires

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Proceedings Article | 26 August 2015 Presentation + Paper

Ordered arrays of bottom-up III-nitride core-shell nanostructures

Ashwin Rishinaramangalam, Mohsen Nami, Benjamin Bryant, Rhett Eller, Darryl Shima, Michael Fairchild, Ganesh Balakrishnan, S. R. Brueck, Daniel Feezell

Proceedings Volume 9553, 955308 (2015) https://doi.org/10.1117/12.2191726

KEYWORDS: Gallium nitride, Nanostructures, Light emitting diodes, Metalorganic chemical vapor deposition, Quantum wells, Scanning electron microscopy, Crystals, Gallium, Indium gallium nitride, Nanowires

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Proceedings Article | 13 March 2015 Paper

Status and future of GaN-based vertical-cavity surface-emitting lasers

Daniel Feezell

Proceedings Volume 9363, 93631G (2015) https://doi.org/10.1117/12.2079503

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Quantum wells, Etching, Indium gallium nitride, Dielectrics, Sapphire, Dielectric polarization, Polarization, Metals

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Proceedings Article | 8 February 2015 Paper

Investigation of plasmonic enhancement in a quantum dot-in-a-well structure

Alireza Kazemi, Brianna Klein, Mohsen Nami, Jun Oh Kim, Monica Allen, Jeffery Allen, Brett Wenner, Dean Brown, Augustine Urbas, Daniel Feezell, Bill Mitchell, Sanjay Krishna

Proceedings Volume 9370, 937019 (2015) https://doi.org/10.1117/12.2076227

KEYWORDS: Polarization, Plasmonics, Gallium arsenide, Absorption, Sensors, Heterojunctions, Near field, Luminescence, Infrared sensors, Infrared detectors

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Proceedings Article | 13 March 2013 Paper

Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers

Casey Holder, Daniel Feezell, James Speck, Steven DenBaars, Shuji Nakamura

Proceedings Volume 8639, 863906 (2013) https://doi.org/10.1117/12.2008277

KEYWORDS: Gallium nitride, Vertical cavity surface emitting lasers, Etching, Applied physics, Dielectric polarization, Quantum wells, Dielectrics, Crystals, Indium gallium nitride, Polarization

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Proceedings Article | 4 May 2010 Paper

State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

James Raring, Eric Hall, Matthew Schmidt, Christiane Poblenz, Ben Li, Nick Pfister, Don Kebort, Yu-Chia Chang, Daniel Feezell, Richard Craig, James Speck, Steven Denbaars, Shuji Nakamura

Proceedings Volume 7686, 76860L (2010) https://doi.org/10.1117/12.849713

KEYWORDS: Semiconductor lasers, Continuous wave operation, Gallium nitride, Laser damage threshold, High power lasers, Laser applications, Laser development, Indium gallium nitride, Pulsed laser operation

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Proceedings Article | 11 March 2010 Paper

High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

James Raring, Eric Hall, Mathew Schmidt, Christiane Poblenz, Ben Li, Nick Pfister, Daniel Feezell, Richard Craig, James Speck, Steven DenBaars, Shuji Nakamura

Proceedings Volume 7602, 760218 (2010) https://doi.org/10.1117/12.840783

KEYWORDS: Semiconductor lasers, Continuous wave operation, Gallium nitride, High power lasers, Laser damage threshold, Laser development, Indium gallium nitride, Pulsed laser operation, Polarization

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Showing 5 of 16 publications

Conference Committee Involvement (2)

Wide Bandgap Materials, Devices, and Applications IV

15 August 2019 | San Diego, California, United States

Wide Bandgap Power and Energy Devices and Applications III

21 August 2018 | San Diego, California, United States

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