The study investigates a new platform of PFAS-free PAGs and evaluates their lithographic efficiency in comparison to PFAS-containing counterparts in multiple model photoresists, including both negative and positive tones, across a broad range of optical exposure wavelengths. PFAS-free photoresists materials demonstrate comparable / superior lithographic performance in resolution, depth-of-focus (DOF), and exposure latitude (EL) compared with their non-degradable counterparts.
In this study, we present the development of PFAS-free AZ® FZero 3DT positive photoresist and AZ® FZero NX-3015 negative photoresist. These novel photoresists were enabled by the utilization of a newly developed PFAS-free M PAG (photoacid generator). Both AZ® FZero 3DT and AZ® FZero NX-3015 photoresists have exhibited comparable lithography performance to their PFAS-containing comparative examples on both Silicon (Si) and Copper (Cu) substrates. Furthermore, the newly developed PFAS-free M PAG has displayed good stability on Cu substrates, outperforming the commercial oxime sulfonate PAG. This stability is particularly crucial for the successful application of photoresists in the fabrication of re-distribution layers (RDL) in advanced semiconductor packaging.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.