This paper is devoted to the research of solid-state matrix photomultiplier’s polarization-optical parameters. Maim parameters of SiPM detectors depend on photodetector’s sensitivity. As an object of study, a silicon photomultiplier ARRAY-C 60035-4P was chosen. Detector consists of 4 photosensitive sites. SiPM contains avalanche photodiodes separated from each other by elements that do not participate in the formation of the useful signal and are used for pacifying secondary optical signal. In this work experimental studies of the state of radiation’s polarization reflected from the surface of SiPM matrix’s active regions are performed using ellipsometer LEF-3F-1. The methodic used is a zero method of determining the polarization angles. During experiment the contractions of ellipsometric angles were determined. The experiment was carried out at four angles of incidence on the surface of the receiver, which corresponds to a set of reflective characteristics of a silicon photoelectric multiplier. Using this data, the estimation of distribution of the reflection and transmission coefficients becomes possible, as well as the sensitivity distribution over the different sites of the SiPM.
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