PPPL recently launched a new initiative in non-equilibrium plasma (NEP) science and technology with a focus on applications associated with key industries of the future (IotF), including semiconductor integrated circuit (IC) device manufacturing and materials associated with quantum information science (QIS). Multisector, cross-community partnerships with leading U.S. plasma semiconductor equipment suppliers and Princeton University have been started to support this initiative. The main challenge for NEP technologies in IC manufacture is atomistic control of chemical and material transformations at surfaces. This capability is also needed for future QIS device manufacturability, so fundamental research on NEP for future IC device manufacture is directly applicable to practical manufacturing of QIS devices.
The big challenge for NEP is that it is chemically complex and often difficult to control. It took decades of research and development by plasma, surface, materials and device scientists and engineers to approach nm-scale precision processing with Si-based materials. The task of developing nm-scale processes for Si device manufacture is not complete, but next-generation IC manufacturing will also require significant changes in materials: i.e. 'post-Si materials.' The combination of new materials and increasingly, atomistic precision, challenges the current state-of-the-art in plasma technologies used for IC manufacture today.
There are even bigger challenges for QIS materials and devices, especially when contemplating the need for developing devices with thousands or even millions of qubits. QIS devices can be made in multiple ways, but thin film approaches, based on existing IC manufacturing technology, have perhaps the best chance to manufacture at scale. Plasma technology is ubiquitous in QIS material fabrication involving thin film approaches, but plasma processes tend to create parasitic qubits and other serious atomic-scale defects. Solving these problems will require considerable research efforts - probably on a multi-decade timescale.
In order to be successful, plasma scientists must work closely and collaboratively with specialists in surfaces, materials and devices. In this talk, I will outline the current and future plans for this new collaborative initiative at PPPL.
The directed self-assembly (DSA) of block copolymers offers a promising route for scaling feature sizes below 20 nm. At these small dimensions, plasmas are often used to define the initial patterns. It is imperative to understand how plasmas interact with each block in order to design processes with sufficient etch contrast and pattern fidelity. Symmetric lamella forming block copolymers including, polystyrene-b-poly(methyl methacrylate) and several high-χ silicon-containing and tin-containing block copolymers were synthesized, along with homopolymers of each block, and exposed to various oxidizing, reducing, and fluorine-based plasma processes. Etch rate kinetics were measured, and plasma modifications of the materials were characterized using XPS, AES, and FTIR. Mechanisms for achieving etch contrast were elucidated and were highly dependent on the block copolymer architecture. For several of the polymers, plasma photoemissions were observed to play an important role in modifying the materials and forming etch-resistant protective layers. Furthermore, it was observed for the silicon- and tin-containing polymers that an initial transient state exists, where the polymers exhibit an enhanced etch rate, prior to the formation of the etch-resistant protective layer. Plasma developed patterns were demonstrated for the differing block copolymer materials with feature sizes ranging from 20 nm down to approximately 5 nm.
Both Langmuir probe and spatial optical emission spectroscopy (OES) measurements have
been used to characterize the TetraTM chrome etch chamber. Langmuir data was measured over a
range of process pressures between 1.5mT and 10mT and source powers between 150W and 500W.
At 350W, the data show electron and ion densities near 1 x 109 cm-3 for Ar and for Cl2/O2 etch
plasmas. Ion density trends with pressure were observed to be opposite for the two plasmas.
The effect of the third electrode designed in the chamber was demonstrated to reduce ion
density by more than an order of magnitude for Ar plasma and still lower for Cl2/O2 plasma.
Electron temperature and plasma potential are also reduced.
Radial OES measurements are reported with a new apparatus that yields direct spatial
emission data. Spatial scans of infrared emission from atomic Cl were measured under a range of
several chamber conditions already measured with the Langmuir probe. The scans showed that the
emission uniformity above the mask can be adjusted to a flat profile by selection of the process
condition.
Exploratory prototype DfM tools, methodologies and emerging physical process models are described. The examples
include new platforms for collaboration on process/device/circuits, visualization and quantification of manufacturing
effects at the mask layout level, and advances toward fast-CAD models for lithography, CMP, etch and photomasks. The
examples have evolved from research supported over the last several years by DARPA, SRC, Industry and the Sate of
California U.C. Discovery Program. DfM tools must enable complexity management with very fast first-cut accurate
models across process, device and circuit performance with new modes of collaboration. Collaborations can be promoted
by supporting simultaneous views in naturally intuitive parameters for each contributor. An important theme is to shift
the view point of the statistical variation in timing and power upstream from gate level CD distributions to a more
deterministic set of sources of variations in characterized processes. Many of these nonidealities of manufacturing can be
expressed at the mask plane in terms of lateral impact functions to capture effects not included in design rules. Pattern
Matching and Perturbation Formulations are shown to be well suited for quantifying these sources of variation.
The two-dimensional, axisymmetric model of a bounded, partially ionized, magnetized glow discharge plasma is presented. The model treats positive ions as particles and electrons as a fluid in a hybrid configuration. The results reported here are directed towards simulating an electron cyclotron resonance (ECR), microwave-sustained plasma. Results include predictions of plasma density and potential, electron temperature and ion flux and energy. Models such as the one presented here have the potential to be used by plasma process engineers and plasma tool designers.
To measure film thickness profiles over substrates with surface topography in situ during spin coating, we use a pulsed laser, a microscope, and a 35-mm camera to stroboscopically create and image interference fringes. The measured film thickness profiles are compared to predictions from a model of the coating flow which accounts for centrifugal, capillary, and viscous forces. This model has been extended to include both radial and azimuthal variations so that the surface contours around fully three-dimensional features may be calculated. Profile asymmetry in the radial direction, known as "pile-up", is caused by surface tension forces near the edges of the feature that accelerate flow where the channel (the film thickness) narrows and retard flow where the film thickness widens.
Plasma-generated particulates are receiving increased attention as a source of contamination in plasma etching and deposition systems. These particles are suspended electrically in the plasma, and they are subject to electrical, thermophoretic, gravitational, and frictional drag forces from both plasma ions and neutrals. Consequently, they form complex spatial arrangements in the glow. We have investigated these particle arrangements by spatially mapping the particle distribution with a simple HeNe scattering system. We have also employed direct sampling as a way to determine particle size. The systems we have studied include copper and aluminum particles formed in an argon sputtering system, and carbon containing particles grown in a methane discharge. In addition we have modeled a particulate containing discharge in an effort to understand how the particulates act under the influence of electrical forces, ion drag, gravitational forces, and thermophoretic forces. The model is used as an aid in understanding the light scattering results.
A pulsed laser, a microscope, and a 35-mm camera are used to stroboscopically create and image interference fringes around surface features during spin coating. The measured film thickness profiles are compared to predictions from a lubrication model. This model has been extended to two dimensions so that the surface contours around features of any width and length may be calculated, and preliminary results are reported. Profile asymmetry, or 'pile- up,' is caused by surface tension forces near the edges of the feature that accelerate flow where the channel (the film thickness) narrows and retard flow where the film thickness widens.
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