Mr. David S. Mui Profile

David S. Mui

Technologist at Applied Materials Inc

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 29 April 2004 Paper

In-tool process control for advanced patterning based on integrated metrology

David Mui, Hiroki Sasano, Wei Liu, John Yamartino, Andrew Skumanich

Proceedings Volume 5378, (2004) https://doi.org/10.1117/12.537444

KEYWORDS: Etching, Semiconducting wafers, Process control, Metrology, Critical dimension metrology, Scatterometry, Data modeling, Optical lithography, Feedback loops, Control systems

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Proceedings Article | 26 June 2003 Paper

Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coating

Wei Liu, David Mui, Thorston Lill, May Wang, Christopher Bencher, Michael Kwan, Wendy Yeh, Takeaki Ebihara, Toshihiro Oga

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485532

KEYWORDS: Etching, Carbon, Photoresist materials, Lithography, Photomasks, 193nm lithography, Critical dimension metrology, Reflectivity, Antireflective coatings, Optical lithography

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Proceedings Article | 16 July 2002 Paper

Line-profile and critical-dimension correlation between a normal-incidence optical CD metrology system and SEM

Weidong Yang, Roger Lowe-Webb, Rahul Korlahalli, Vera Zhuang, Hiroki Sasano, Wei Liu, David Mui

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473425

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Photoresist materials, Diffraction gratings, Diffraction, Reflectivity, Finite element methods, Spectroscopy, Polarizers

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Proceedings Article | 11 June 1999 Paper

Progress of a CVD-based photoresist 193-nm lithography process

Carol Lee, Dian Sugiarto, Ling Liao, David Mui, Timothy Weidman, Michael Nault, Tony Tryba

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350216

KEYWORDS: Etching, Line edge roughness, Plasma, Lithography, Chemical vapor deposition, Polymers, Photomasks, Critical dimension metrology, 193nm lithography, Oxidation

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Proceedings Article | 29 June 1998 Paper

Feasibility of a CVD-resist-based lithography process at 193-nm wavelength

Carol Lee, Siddhartha Das, John Yang, Timothy Weidman, Dian Sugiarto, Michael Nault, David Mui, Zoe Osborne

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312392

KEYWORDS: Line edge roughness, Plasma, Etching, Refractive index, Chemical vapor deposition, Lithography, Plasma etching, Oxides, Semiconducting wafers, Photoresist processing

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