Mr. Debao Ding Profile

Debao Ding

at ChangXin Memory Technologies, Inc.

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Publications (2)

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Proceedings Article | 1 December 2022 Paper

Haze classification based on location for COG mask

Yilei Zeng, Yu Zhang, Debao Ding, Hunter Li

Proceedings Volume 12293, 122930W (2022) https://doi.org/10.1117/12.2640331

KEYWORDS: Air contamination, Photomasks, Semiconducting wafers, Quartz, Manufacturing, Mask cleaning

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As the medium that transfers integrate circus design graphics to wafer, reticle has irreplaceable importance. DRAM lithography process below 20nm needs multi-patterning technology without EUV adoption, which means more masks need to be used to reach a certain process target. At present, the conventional masks in the industry are divided into phase shift mask(PSM) and chrome on glass (COG) mask. This paper focuses on haze research for COG mask. Haze has always been an unavoidable topic for mask management. In CXMT some traditional haze like ammonium sulfate has almost disappeared. However, several COG masks in a set of products still suffered haze issues which caused very short lifetime. This haze has very typical characteristics, which is different from ammonium sulfate haze or molybdenum oxide haze widely recognized in worldwide. Based on the mask layout, the correlation between haze and mask pattern was explored, as well as the specific location relationship between haze and line in the pattern. Two different haze types named type L and type C were identified based on their aggregation map, of which the growth rate and frequency were tracked, and the chemical sources were identified based on the microscopic results. Based on what we found, the mask manufacture process in mask house and mask management process in fab were optimized to maximum mask lifetime.

Proceedings Article | 1 December 2022 Poster + Paper

Research of high-transmission phase-shift mask on critical dimension uniformity in ArF lithography

Yilei Zeng, Yi Cheng, Peisheng Li, Teng Zhang, Zhong Zhang, Yu Zhang, Debao Ding

Proceedings Volume 12293, 122930X (2022) https://doi.org/10.1117/12.2641687

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Nanoimprint lithography, Phase shifts, Metrology, Scanning electron microscopy, Polarization, Lithographic illumination, Transmittance

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EUV is considered to be the promising lithography technology for the continuous evolution of semiconductor nodes. However, the mainstream ArF/Immersion lithography are still used in current industry and keep continual develop process node ahead. The performance of the mask determines the quality of lithography process directly. Litho-images on wafer come from mask pattern. The quality control of exposure image like local CD uniformity(LCDU) become the most critical factor except the optical proximity correction (OPC) effect. In view of the great challenge of LCDU improvement of small hole pattern on the of 1xnm process research and development. How to use ArF/Immersion lithography technology to improve the performance of hole pattern is this research topic. A new high transmission phase shift mask(HT-PSM) developed on the common ArF/Immersion platform and compared with the performance of normalized image log slope(NILS), mask error enhancement factor(MEEF) and depth of focus (DOF), found that 30%HT-PSM has advantage over the hole pattern. In this paper, research for positive tone development(PTD) and negative tone development(NTD) on high transmission phase shift rate. Different transmission manufacturing processes and application of 30%PSM are compared with conventional 6%PSM. At the same time, litho-image exposure on wafer can be measured and compared in actual research and development. Combine the results of resolution and physical failure analysis(PFA) results, it has higher resolution and good section-cross profile. Meanwhile, the LCDU is improved about 10% batter than conventional PSM mask, which makes an effective contribution to the research and development of advanced process.

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