Based on the quantum-mechanical transport calculations of the charge and spin fluxes associated with the inhomogeneous thermal heating of three-dimensional structure of MTJ by the input RF microwave power, finite-element analysis of the thermal contribution to the spin-torque sensitivity of MTJ was carried out in the case of zero bias current. Within the magnon-induced spin-transfer torque model, the amplification of DC rectifying voltage in the spin-torque diode initiated by the spin pumping to the tunnel barrier from magnons was also estimated. The results obtained can be used for the development of new types of microwave detectors based on spin thermoelectric effects in MTJ.
A three-dimensional numerical model of a thermal accelerometer with a thermal resistance effect in a sensitive element on a thin-film multilayer membrane based on MEMS technology has been developed and tested. The change in temperature difference on thermistors in the acceleration range from 1 to 10g and the applicability of the proposed technological solution for the implementation of thermal inertial systems are analyzed. The results obtained can be used for the optimization and development of a multi-axis thermal accelerometer.
Full fabrication process of nanoscale vacuum channel and gate-all-around nanowire transistors at the 45, 32 and 22 nm technology nodes was simulated in Silvaco TCAD. Comparative analysis of operation modes was made on the basis of the obtained structures. It was shown that nanoscale gate-all-around transistor has sufficiently low power consumption while vacuum channel field effect transistor makes it possible to achieve performance that exceeds performance which can be obtained from the transistor with semiconductor channel. The combination of the above technologies can serve as approach to the creation of low-power and high-speed nanoscale vacuum devices using established complementary metal-oxide-semiconductor (CMOS) technology.
Here we describe SPICE-compatible compact model of the nano-sized magnetic junction for STT-MRAM at technology nodes beyond 90 nm, where the impact of thermal stability factor and magnetotransport size effects should be taken into account at sub-20 nm dimensions. Within this model it was found that the spatial quantization of the spin-transfer torques which occurs in the magnetic nanobridge based on spin-valve junction (SVJ), when scaling down the nanobridge size below 10 nm, leads to several times higher switching speed, rather than in the case of using magnetic tunnel junctions (MTJ) at the same design rule. Implementation of the current-induced magnetization dynamics into the SPICE model of the nano-sized magnetic junction is based on the equivalent circuit for solving the Landau-Lifshitz-GilbertSlonczewski (LLGS) equation with the effective terms describing the microscopic behavior of spin-transfer torques. This model can be useful for predictive simulation of STT-MRAM performance at advanced technology nodes.
The article describes the status of work on the project of maskless x-ray nanolithography using a chip of transmission microfocus X-ray tubes with field emission cathodes as a dynamic mask device. The basic principles of this method of projection photolithography are considered, and the estimations of the expected throughput of the process are given. A noticeable part of the article is devoted to a model for numerical simulation of the emission characteristics of thin film targets at their exitation with a low energy electrons beam. The experimental results on measurements of the conversion efficiency of electrons energy into soft X-ray radiation of berillium Kα line (λ=11.4 nm) are presented. Other promising materials which could be used as efficient film targets for the mentioned design of maskless nanolithography are proposed.
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