Phosphorus-free multiple-quantum-well lasers with In0.53Ga0.47As wells, In0.53Al0.2Ga0.27As barriers, and In0.53Al0.47As claddings have been fabricated as Fabry-Perot devices of different lengths and widths. Their current-voltage and light-current characteristics have been measured over a wide temperature range from 200 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.
GaSb-based multiple-quantum-well lasers with In0.2Ga0.8Sb wells, Al0.35Ga0.65Sb barriers, and Al0.9Ga0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.
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