With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.
We prepared the vanadium oxide thin films on Si substrates by magnetron sputtering , using different substrate temperatures, 300℃, 350℃, 400℃. The effects of substrate temperature on film composition, micro morphology, resistance temperature characteristics, TCR (temperature coefficient of resistance) and other thin film characteristics were analyzed by XRD (X-Ray Diffraction), FESEM (Field emission scanning electron microscopy), and four-probe method. Results show that the increase of substrate temperature is conducive to the promotion of V2O5 (101) crystal formation in the films, meanwhile it is beneficial to reduce the gap and improve the uniformity of grain size, so as to increase the density of the films. The variation range of the film resistance was 500~1700 KΩ·cm,200~550 KΩ· cm and 30~160 KΩ· cm when the substrate temperature was 300 ℃ ,350 ℃ and 400 ℃ . With the increase of substrate temperature, the room temperature resistance and high temperature resistance of the thin film are greatly reduced, and the TCR performance has been optimized at the same time. The room temperature TCR of the film is about -2.4%/℃ under 400 ℃ substrate temperature, and the average TCR is about -1.98%/℃ in the process of temperature change.
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