With the first delivery from ASML to Intel end of 2023, the next generation of EUV systems with ZEISS optics has found its way to the first high-end chip manufacturer. The increased numerical aperture (NA) of 0.55 compared to stateof-the-art EUV optics with a NA of 0.33, the new generation of NA=0.55 EUV scanners allow to support Moore’s law for at least another decade. Besides the new NA=0.55 EUV systems, ZEISS and ASML also continuously improve the current EUV scanners by enabling higher throughputs combined with improved imaging performance. We will present an overview over the status and key facts of the new NA=0.55 EUV optics as well as the latest performance improvements achieved for EUV systems with NA of 0.33. Furthermore, we will provide a glance at the EUV optics roadmap and provide give an outlook on what can be expected for EUV optics in future.
The EUV lithography optics program continues to enable the progress of the semiconductor roadmap with higher productivity and finer imaging resolution. ZEISS Starlith® lithography optics systems with a numerical aperture (NA) of 0.33 and an optical resolution of 13 nm half-pitch are being produced in high volume for integration into ASML´s NXE scanners, which have established themselves as industry workhorses in leading edge semiconductor manufacturing. Even finer imaging resolution will be achieved with the Starlith® 5000 for ASML´s EXE scanners, with NA = 0.55 and an optical resolution of 8 nm half-pitch, with highly flexible illumination and an anamorphic projection optics featuring a central obscuration. The first Starlith® 5000 illuminator and projection optics box have been delivered to ASML. The outlook includes future roadmap extensions for low-k1 imaging at increased productivity and potential further improvements of the single exposure resolution capabilities.
With already more than 160 EUV scanners operational worldwide, the promise of EUV lithography became a high-volume-manufacturing reality in the past few years. Moreover, EUV lithography has now become the main enabler for the latest generations of chips we all know and use. ZEISS and ASML keep on developing the capability of EUV tools to further enable upcoming generations of chips. The next step is an increase of the numerical aperture (NA) of our optics from currently 0.33 to 0.55. These high-NA tools will support the shrink prescribed by Moore's Law to continue well into the next decade, by allowing lithographers to print 8nm half-pitch in a single exposure. We will give an update on the current production status at ZEISS: not only on mirror surface polishing, coating, metrology, but also on mirror handling and integration. Moreover, we will also present the current status and prospects of 0.33-NA optics.
In recent years the promise of EUV lithography became a high-volume-manufacturing reality. With already more than 160 EUV scanners in the field worldwide (and counting!), EUV lithography has now a solid footing in market and is currently the main enabler for the latest generations of chips we all know and use. To enable the future generations of chips, with even smaller feature sizes than what we currently have on the market, ZEISS and ASML are developing a new generation of EUV tools, where the numerical aperture (NA) of their optics is increased from the current 0.33 to 0.55. These high-NA tools will allow the shrink prescribed by the Moore's Law to continue well into this decade, by allowing the lithographers to print 8nm half-pitch in a single exposure. In this presentation we will remind briefly on high-NA optics concepts as compared to its 0.33-NA predecessor. We will give insight into how advanced the current production status at ZEISS is: not only into mirror surface polishing, coating, metrology, but also mirror handling and integration as well as shipment. Moreover, besides what happens in high-NA program, you will also see the current status and ongoing improvements to 0.33-NA optics.
This conference presentation was prepared for Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 2022.
The application of customized and freeform illumination source shapes is a key enabler for continued shrink using
193 nm water based immersion lithography at the maximum possible NA of 1.35. In this paper we present the
capabilities of the DOE based Aerial XP illuminator and the new programmable FlexRay illuminator. Both of these
advanced illumination systems support the generation of such arbitrarily shaped illumination sources. We explain how
the different parts of the optical column interact in forming the source shape with which the reticle is illuminated.
Practical constraints of the systems do not limit the capabilities to utilize the benefit of freeform source shapes vs. classic
pupil shapes. Despite a different pupil forming mechanism in the two illuminator types, the resulting pupils are
compatible regarding lithographic imaging performance so that processes can be transferred between the two illuminator
types. Measured freeform sources can be characterized by applying a parametric fit model, to extract information for
optimum pupil setup, and by importing the measured source bitmap into an imaging simulator to directly evaluate its
impact on CD and overlay. We compare measured freeform sources from both illuminator types and demonstrate the
good matching between measured FlexRay and DOE based freeform source shapes.
This paper describes the principle and performance of FlexRay, a fully programmable illuminator for high NA
immersion systems. Sources can be generated on demand, by manipulating an array of mirrors instead of the traditional
way of inserting optical elements and changing lens positions. On demand (freeform) source availability allows for
reduction in R&D cycle time and shrink in k1. Unlimited tuning allows for better machine to machine matching.
FlexRay has been integrated in a 1.35NA TWINSCAN exposure system. We will present data of FlexRay using
measured traditional and freeform illumination sources. In addition system performance qualification data on stability,
reproducibility and imaging will be shown. The benefit of FlexRay for SMO enabling shrink is demonstrated using an
SRAM example.
This paper describes the principle and performance of a fully programmable illuminator for a high-NA immersion
system. Sources can be generated on demand, by manipulating an array of mirrors instead of the traditional way of
inserting optical elements and changing lens positions. All mirrors are always used to create the source such that no light
is lost when switching from one source shape to another.
Measured sources generated with this new type of illumination system will be shown and compared to the target sources
generated by source mask optimization software or targets of traditional sources. Comparison between measured and
target source will be done both in parameters of a pupil fit model and by simulated imaging impact. Also the first results
in resist obtained on a XTIV 1950Hi 1.35 NA tool equipped with this illuminator are presented and compared to
measurements on the same system when it was equipped with an Aerial XP illumination system.
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