Porous OSG low-k dielectrics deposited by using TEOS and MTEOS mixture with different ratios and Brij® 30 surfactant. The deposited samples contain a different concentration of terminal methyl groups that is proportional to MTEOS concentration. An increase in the methyl groups concentration by changing TEOS/MTEOS ratio decreases the open porosity, k-value, and Young’s modulus and increases the mean pore radius although the template concentration was kept constant. Plasma damage by fluorine radicals depends on the carbon concentration in the films. It can be reduced by 60% when the carbon concentration in the film exceeds 10 atomic percent as measured by XPS (the films deposited with TEOS/MTEOS ratio 40/60).
Effects of vacuum plasma etching with subsequent thermal annealing on electrical properties of thin ferroelectric lead zirconate-titanate films are studied. It is shown that vacuum plasma etching leads to the decrease of electrical properties of the films due to defects formation. It is found that defects induced by ion-beam and reactive-ion etching demonstrate different behavior after the high temperature post-annealing. The annealing after reactive-ion etching leads to practically complete recovering of the film’s properties, whereas the films annealed after ion-beam etching degrade even more. Polarization properties of the films after vacuum plasma etching are studied by piezo-force microscopy.
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