We present a new approach for the modelling of non-linear effects in silicon based ring resonators by coupling equations for Two-Photon-Absorption (TPA), Free-Carrier-Absortpion (FCA) and self-heating with the Shockley–Read–Hall theory involving trap-assisted recombination processes. SRH gives a non-linear carrier lifetime which is essential to fit model results with the experiments. The developed model is validated by comparison with experimental measurements performed on different ring types and it is employed in the design of rings with minimal non-linear effects for integration in ring-based Si PIC mirrors for high power hybrid III-V/Si tunable lasers.
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