Dr. Dongwei Jiang Profile

Dr. Dongwei Jiang

at Institute of Semiconductors Chinese Academy of Sciences

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 16 December 2022 Poster + Paper

2μm-compatible avalanche photodetector using Sb-based superlattice

Wenguang Zhou, Junkai Jiang, Nong Li, Faran Chang, Guowei Wang, Yingqiang Xu, Donghai Wu, Dongwei Jiang, Hongyue Hao, Weiqiang Chen, Suning Cui, Xueyue Xu, Zhichuan Niu

Proceedings Volume 12324, 1232413 (2022) https://doi.org/10.1117/12.2644100

KEYWORDS: Avalanche photodetectors, Superlattices, Aluminum, Ionization, Absorption, Sensors, Laser sintering, Electrons, Signal detection, Satellites

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Proceedings Article | 14 November 2018 Paper

Mid-/long-wave dual-band infrared focal plane array based on type-II InAs/GaSb superlattice

Zhi Jiang, Yao-Yao Sun, Chun-Yan Guo, Hong-Yue Hao, Dong-Wei Jiang, Guo-Wei Wang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 10826, 108261X (2018) https://doi.org/10.1117/12.2506053

KEYWORDS: Mid-IR, Long wavelength infrared, Superlattices, Sensors, Staring arrays, Quantum efficiency, Infrared radiation, Gallium antimonide, Electrons, Photodiodes

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Proceedings Article | 9 November 2018 Paper

Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process

Qing-xuan Jia, Chun-yan Guo, Yao-yao Sun, Cheng-ao Yang, Yue-xi Lv, Zhi Jiang, Da-nong Zheng, Xi Han, Dong-wei Jiang, Guo-wei Wang, Zhi-chuan Niu

Proceedings Volume 10826, 108261Z (2018) https://doi.org/10.1117/12.2509181

KEYWORDS: Antireflective coatings, Photodetectors, Infrared detectors, Superlattices, Sensors, Infrared photography, Infrared radiation, Infrared sensors, Silica, Reflectivity

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Proceedings Article | 5 November 2018 Paper

Surface passivation of 1550nm AlxInyAsSb avalanche photodiode

Chunyan Guo, Yuexi Lv, Da’nong Zheng, Yaoyao Sun, Zhi Jiang, Dongwei Jiang, Guowei Wang, Yingqiang Xu, Tao Wang, Jinshou Tian, Zhaoxin Wu, Zhichuan Niu

Proceedings Volume 10814, 1081416 (2018) https://doi.org/10.1117/12.2500523

KEYWORDS: Avalanche photodetectors, Dielectrics, Avalanche photodiodes, Silica, Plasma, Aluminum, Capacitance, Etching, Oxides, Gallium antimonide

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