Dual-photoresist complementary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the submicron pit array patterns on a sapphire surface. The oxide photoresist is patterned by direct laser writing, and the developed pit size decreases to a smaller value than the laser spot size due to the thermal lithography. The oxide photoresist possesses strong etching resistance against oxygen plasma but shows no resistance against chlorine plasma. During the ion-coupled-plasma reactive-ion-etching process, chlorine plasma is a necessary component to etch the sapphire. Moreover, the characteristics of organic resist are opposite those of oxide photoresist and possess moderate resistance against chlorine plasma but no resistance against oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported in this study. The dependence of laser power on the developed mark sizes and morphologies is examined by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated, and the thermal lithography concept is introduced to explain the effect of power on the developed oxide mark width. Images of patterned pit array on a commercial 4-inch-diameter sapphire substrate are also shown.
Dual photoresist complimentary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the sub-micro pit patterns on a sapphire surface. The oxide photoresist is patterned by the direct laser writing and the developed mark size decreases to a smaller value than the laser spot size due to the thermal lithography. The small developed pit diameter is one of the advantages using oxide photoresist. The oxide photoresist possesses strong etching resistance against the oxygen plasma but shows no resistance against the chlorine plasma. The chlorine plasma is a necessary component to etch the sapphire during the ion-coupled-plasma reactive-ion-etching process because of sapphire’s mechanical hardness and chemical stability. However, the characteristics of organic resist SU8 are opposite to that of oxide photoresist and possess moderate resistance against chlorine plasma but show no resistance to oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported here. The dependence of the laser power on the developed mark sizes and morphologies is illustrated by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated. Images of patterned pits on the large commercial sapphire substrates are also shown.
An automatic scanning path generation method is developed. The method is based on a 3-axis automatic inspection
system which is used to detect the clearance ratio of spinneret plate. The user can rely on this method to automatically
generate the scanning path for an unknown spinneret plate in the spinneret test. Then the scanning path can be learned by
the inspection system and repeated it for other the same spinneret. Two type spinnerets are introduced in this paper to
describe the automatic scanning path generation method. In this paper, the 3-axis automatic inspection system includes a
3-axes motorized linear stage, a telcentric lens, a top light source, a bottom light source, 1 CCD camera and a controlled
PC.
The optical constants including the refraction index n and extinguished coefficient k of the variety of materials are
calculated from their reflection and transmittance measurements with measured wavelengths. We derive the reflectance
and transmittance equations associated to the material film optical constants. The organic and inorganic materials used
for optical recording medium materials are examined. The organic dyes show that significant optical constants vary with
the laser wavelength, in comparison to the inorganic phase-change materials. This is an evidence to indicate the
complicated bonding structure in the organic dyes within the measured wavelength ranges.
Conference Committee Involvement (2)
International Instrumentation and Measurement Technology Conference
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