A NASA Advanced Component Technology (ACT) program targeted development of electron avalanche photodiodes (eAPDs) that spanned the 500 nm to 2500 nm spectral range. This ACT task leveraged an existing eAPD that are used by astronomers and other NASA programs. However, the existing eAPD cut-on wavelength starts at 800 nm, due to the CdTe buffer layer through which photons have to traverse prior to reaching the HgCdTe absorber layer. This ACT task extended the eAPD detectors cut-on wavelength down to the visible wavelength range, which required the removal of the GaAs substrate and the CdTe buffer layer. The most challenging portion of the project was the development of a passivation layer at the illuminating surface that transmits photons between 500 nm and 2500 nm, while minimizing surface recombination velocity at the surface to maintain low dark current. The baseline was to demonstrate an eAPD with 500 nm cuton wavelength, with a goal of extending the cut-on wavelength into UV. A critical task on the program was development of a passivation process to drive minority carriers away from the passivant/HgCdTe interface towards the gain region. Two potential passivants were investigated. Results of the experiments showed one variant gave the best results and has been chosen as the deposition method. Progress was made in the development of visible to SWIR APDs in that QE was measured to be flat across the 500 nm to 2500 nm band but was low ~ 15% for one of the arrays. Another APD array had QE as high as 28%. The contention is that etching for the two arrays was different resulting in different HgCdTe absorber thickness values. Low QE is probably because the thickness of the absorber may be approximately equal to or longer than the diffusion length. Consequently, the thinner absorber regions result in higher QE, whereas the thicker absorber region of the array result in lower QE. Gain as a function of bias was measured and gain M ranged from ~ 25 to 50 at 10 V bias exceeding the M = 10 at 10 V requirement. Improving QE in the future will be by etching further into the HgCdTe absorber. This will reduce the distance that the carriers have to diffuse to reach the junction and should increase the QE.
One of the primary goals of HgCdTe linear-mode avalanche photodiode arrays is to provide a 1kx1k pixels format, @15 μm pitch, near-infrared (0.9 to 2.5 μm) detector suitable for ultra-low background astronomical applications and long integration times. Such science goals impose very strict detector requirements, namely a dark current <0.001 [e−/pix/sec] and a sub-electron read noise. The Institute for Astronomy (IfA), University of Hawaii has partnered with Leonardo Company to develop such devices, using fine control of the photodiode process to enable noise-free amplification of the charge carriers and a readout circuit optimized for minimal glow. We discuss the first results of the tests conducted at the IfA on this new device operated in our cryogenic testbed. We report the values of dark current, read noise and conversion gain, as well as its cosmetic qualities that we have measured at a temperature of 50K. The measured dark current of these devices at low bias voltages is of ∼3 [e-/pix/ksec] (ksec=1000 seconds). We show that this dark current is dominated by the glow emitted by the ROIC of the detector when it is being read out. The intrinsic dark current of these devices is consistent with zero, with a best estimate of ∼0.1 [e-/pix/ksec]. The glow coming from the ROIC is measured to be ∼0.08 [e-/pix/frame], or 1 [e-/pix] every ∼12 frames. The read noise of these devices starts around ∼10 [e-/pix/frame] at a bias voltage of 3V, and decreases by a factor of 1.3 with each +1V increment of the bias voltage, in agreement with theory. It is reduced to ∼2 [e-/pix/frame] at a bias voltage of 8V.
KEYWORDS: Sensors, Interfaces, Thermal modeling, Tolerancing, Manufacturing, Temperature metrology, Design for manufacturability, Finite element methods, Signal detection, Aluminum
Leonardo partnered with the Institute for Astronomy (IfA), University of Hawaii to develop a 1K x 1K infrared avalanche photo diode suitable for low background science applications. Presented here is the design and thermal modeling for the Kovar carrier for mounting the detector as well as the challenges faced in designing and manufacturing the complex flex cable. The flex cable provides the 68 bond pads necessary to service the detector in a width of just over 17mm as well as providing filtering for the bias supplies. The final package is a compact, three side buttable package that has been successfully tested at an operating temperature of 80K.
Linear-mode, avalanche photodiode arrays (LmAPDs) based on bandgap-engineered HgCdTe, grown by Metal Organic Vapour Phase Epitaxy (MOVPE) are used in low-flux applications, where the signal-to-noise ratio would otherwise be very low. The LmAPD mesa-device architecture provides 100% fill factor, low crosstalk and minimal interpixel capacitance. Saphira (320×256/24 μm) devices operating at an avalanche gain of 50-100 and temperature of 80-90 K are deployed in 12 telescopes as wavefront sensors and notably control the four 8.2 m telescopes in the Very Large Telescope (VLT) interferometer. Some of these devices have operated for many years at full gain. Applications now split into three main categories. Firstly, those with intrinsically weak infrared sources that need moderate avalanche gain but very low dark current – 1k×1k/15 μm and 2k×2k/15 μm arrays are currently in development to service this requirement. Secondly, future adaptive optics (AO) systems, associated with 30 m class telescopes, require larger arrays and frame-rates over 2000 frames/s. A 512×512/24 μm device, specifically for pyramid wavefront sensors, is currently under development for the Extremely Large Telescope (ELT). The third category covers high speed (GHz) APDs mainly for free-space optical communications and LIDAR. This paper provides an update on the technology and status of the developments.
HgCdTe material has been grown on GaAs substrates using Metal Organic Vapour Phase Epitaxy (MOVPE) and 64 x 64 arrays were subsequently manufactured. HgCdTe was grown on 12 wafers and 6 wafers continued through processing. Companion 320 x 256, 24 μm pitch arrays were also manufactured on the same wafer. These 320 x 256 arrays are hybridized to an existing imaging ROIC. Signal and noise data are collected as a function of bias to determine Gain vs Bias and operability of the companion detector arrays. The existing 320 x 256 ROIC was designed for astronomy applications and precludes measurements at bias values < ~ 10 V since the amplified signal from the detector saturates the well of the ROIC. Gain was measured for bias values up to ~ 10 V and extrapolated to determine gain at higher bias values. This ROIC also does not permit fast pulse measurements. An alternate ROIC has been designed for fast pulse measurements but will not be presented here. Based on the 320 x 256 array signal, noise, Gain vs Bias and morphology data all 6 processed wafers yielded 64 x 64 detector arrays that are available for hybridization to ROICs. 320 x 256 arrays had operability < 99.9% based on the signal and noise data. Response and noise histograms have mean and median values within 1% of each other. The noise histogram is near Gaussian in shape. APD arrays hybridized to fanout chips are in assembly and APD gain vs bias, noise and transient response measurements are being measured directly without going through a ROIC.
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