The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.
A room temperature direct bonding using surface activation by argon (Ar)-beam sputtering was applied to the bonding
between gallium nitride (GaN) and gallium arsenide (GaAs). The silicon doped n-type GaN films used in this
experiment were grown by metal organic chemical vapor deposition on (0001) sapphire substrates. The GaN film
thickness is 3 μm with a surface roughness of approximately 0.22 nm (Ra) as measured by atomic force microscopy. The
silicon doped n-type GaAs (100) wafers with a surface roughness of approximately 0.34 nm (Ra) were used as GaAs
substrates. The GaN and GaAs samples were cleaned by sputtering with a 1.5 keV Ar-fast atom beam with 15 mA in
the vacuum chamber (background pressure: 1.3×10-5~4.0×10-4 Pa). Then, the samples were brought into contact as
quickly as possible with a load of 735 N at room temperature. After this process, GaN films were successfully bonded to
GaAs substrates without any heat treatment. Cross-sectional scanning electron microscopy showed that most of the
interface area was well bonded. The bonding strength was evaluated by die-shear tests. Although all samples were
visibly separated from the interface rather than in the bulk region after die-shear tests, the estimated die-shear strength of
GaN/GaAs structures was 1.5 -7 MPa. The advantage of our process is free from the various problems caused by the
large thermal expansion mismatch during heat treatment in the conventional fusion bonding.
We report the low-temperature bonding of a lithium niobate (LiNbO3) chip with gold (Au) thin film to a silicon (Si)
substrate with patterned Au film for hybrid-integrated optical devices. The bonding was achieved by introducing the
surface activation by plasma irradiation into the flip-chip bonding process. After the Au thin film (thickness: 500 nm)
on the LiNbO3 chip (6 mm by 6 mm) and the patterned Au film (thickness: 2 μm) on the Si substrate (12 mm by 12 mm)
were cleaned by using argon (Ar) radio-frequency (RF) plasma, Au-Au bonding was carried out in ambient air with
applied static pressure (~50 kgf). The LiNbO3 chips were successfully bonded to the Si substrates at relatively low
temperature (< 100 °C). However, when the bonding temperature was increased to be greater than 150 °C, the LiNbO3
chips cracked during bonding. The tensile strength (calculated by dividing the total cross-sectional area of the initial,
undeformed micropatterns) of the interface was estimated to be about 70 MPa (bonding temperature: 100 °C). It was
sufficient for use in optical applications. These results show the potential for producing highly functional optical
devices and for low-cost packaging of LiNbO3 devices.
This paper describes the low-temperature bonding of a lithium niobate (LiNbO3) waveguide chip to a silicon (Si) substrate for integrated optical systems. The bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au thin films (thickness: 100 nm) of the
LiNbO3 chip and the Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. The bonded chips fractured at bonding temperature higher than 150°C because of the coefficient of thermal expansion (CTE) mismatch. The LiNbO3 chips were successfully bonded to the Si substrates at relatively low temperature (100°C). The die-shear strength of the LiNbO3 chip was estimated to be more than 12 kg (3.8 MPa), the upper limit of our shear testing equipment.
Flip-chip bonding of various optical components on a silicon substrate by passive optical alignment, which eliminates complicated optical axis precise alignment, has opened up many new possibilities in constructing highly functional, reliable, and low-cost optical micro-systems. Using this technique several micro-sensors have been developed. Moreover, for future optical micro-systems, a novel method of a low temperature flip-chip bonding using surface activated bonding process has been introduced.
The radiation force exerted on a transparent disk-type optical rotator with shape dissymmetry is predicted using a x-ray optics model. We performed a quantitative analysis of the torque exerted on the rotator while ion a single-beam gradient-force optical trap. Rotation is due to the optical torque from the laser radiation pressure on the side walls. Thus, the maximum torque is obtained when a large proportion of the laser beam is incident to the side walls. Both the trapping force and the torque depend proportion of the laser beam is incident to the side walls. Both the trapping force and the torque depend strongly on the position of the rotator and the numerical aperture. We also found that there is an optimum value of NA at which the maximum torque is generated. The validity of the ray-optics model for polystyrene latex spheres in the trap was also confirmed by our experimental results. From the experimental rotation speed of the polymide rotator and the numerical results, we quantified the damping factor and the static frictional torque of the rotator.
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