Yb-doped fiber laser and amplifiers are strong contenders as combinable sources used in power-scalable spectral beam combined and coherent beam combined High Energy Laser (HEL) systems. Power levels well beyond 300kW is anticipated for HEL systems for DoD applications. Pumping these fiber amplifiers at 976 nm has become an imperative. Furthermore, technology demonstrations of HELs have resorted to slow turn-on time. This needs to change for fieldable HEL systems. The need for an “instant-on” of HEL beam on demand cannot be over emphasized. Pumping a fiber laser/amplifier on this strong absorption peak also leads to a reduction in cost due to the shorter fiber and higher threshold power for nonlinear effects such as Stimulated Raman Scattering (SRS) and Stimulated Brillouin Scattering (SBS). But the absorption band of Yb-doped fiber is very narrow (<5 nm) and very sharp drop-off occurs around the peak near 976 nm. nLIGHT has developed high-efficiency, OSL technology by incorporating into the semiconductor laser chip, a wavelength-selective element which forces the laser to operate only at the desired wavelength over all operating current (output power) and a wide range of operating temperature. Although wavelength-stabilization in semiconductor laser pumps have been done in the past using external Volume Bragg Gratings (VBGs) they are not as efficient for HEL application. Furthermore, VBG adds cost, mass and volume to the pump package. We have demonstrated nearly penalty-free wavelength-stabilized high power, high efficiency chips. These chips can be readily introduced into a fiber-coupled package without needing any modification to the opto-mechanical design of the package – a drop-in replacement to the current pump packages. We have packaged them in a low SWaP fiber-coupled packages to produce ⪆550W with 55% at 25C and ⪆530W with ⪆52% at 50C using wavelength-locked diodes with a narrow spectral bandwidth ⪅0.4 nm at FWHM. The center wavelength shifts at 0.065 nm/K. The full power-in-the-band (within ±2nm of Yb-absorption peak) can be achieved in millisecond time scale enabling instant-on capability for HEL systems. Wavelength-stabilized pumps will be an imperative in fielded HEL systems because these pumps will enable high efficiency, high fiber amplifier channel power, low SWAP, low cost and “instant on” over a wide operating temperature range.
Tm-doped fiber amplifiers are good sources for high energy laser, DIRCM, LIDAR, remote sensing and spectroscopy. The reported Tm-doped amplifiers have efficiencies between 55% to 65%. The diode lasers that are commercially available at 793 nm produce about 35% ex-fiber efficiency. Therefore, the power conversion efficiency of Tm-doped amplifiers is only in the range of 20% - 23% which is less than half that of Yb-doped amplifiers. One straightforward way to improve the e-o power conversion efficiency of Tm-doped fiber amplifiers is to boost the efficiency of 793 nm diode pump from 35% to >55%. This will enable >36% efficient Tm-doped fiber amplifiers. With improvement in epitaxial design, we have demonstrated 64% at 15.5 W producing fiber-coupled package with 400 W in 225-μm/0.22 NA and 54% ex-fiber efficiency in packages with <0.63 kg/kW and <0.49 cc/W specific mass and specific volume, respectively. Further improvement is underway and we will update the latest results.
In this paper, we show results of further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using new extra Reduced-mode (x-REM) diode design providing a record ~363 W output from a 2×12 nLIGHT element® in 105 μm diameter fiber. There is also an increasing demand for low size, weight and power-consumption (SWaP) fiber-coupled diodes for compact High Energy Laser (HEL) systems for defense and industrial applications. Using thirty single emitters that were geometricallyand polarization-combined, we have demonstrated 600 watts and 62% efficiency at in 225 μm/0.22 NA fiber resulting in specific mass and volume of 0.44 kg/kW and of 0.5 cm3/W respectively. Furthermore, we have increased the number of chips to forty and increased the output power to 1kW and 52% in the same fiber diameter and numerical aperture. This results in a fiber-coupled package with specific mass and volume of <0.18 kg/kW and <0.27 cm3/W, respectively.
In this paper, we show results of further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design providing a record ~340 W output from a 2×12 nLIGHT element® in 105 μm diameter fiber. These diodes will allow next generation of fiber-coupled product capable of >250W output power from 105 μm/0.15 NA beam at 915 nm. There is also an increasing demand for low SWaP fiber-coupled diodes for enabling compact high energy laser systems for defense applications. We have demonstrated 600 watts and 60% efficiency at 15C in 220 μm/0.22 NA fiber resulting in specific mass and volume of 0.44 kg/kW and of 0.5 cm3/W respectively.
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