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Evgeny Orekhov
at IPPM RAS
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Publications (1)
Proceedings Article | 8 January 2013 Paper
TCAD analysis of self-heating effects in bulk silicon and SOI n-MOSFETs
Konstantin Petrosyants, Evgeny Orekhov, Igor Kharitonov, Dmitri Popov
Proceedings Volume 8700, 870016 (2013) https://doi.org/10.1117/12.2017550
KEYWORDS: Transistors, Silicon, Resistance, Silicon films, Doping, Field effect transistors, Device simulation, Thermal modeling, TCAD, Molybdenum
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