Mr. Feng Hao Chang Profile

Feng Hao Chang

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Proceedings Article | 21 November 2023 Presentation + Paper

EUV pellicle technology for high volume wafer production

Yun-Yao Lin, Pei-Hsun Tsai, Kelvin Elphick, Ching-Ho Hsu, Dino K. Shieh, Feng Hao Chang, James C. Huang, Jerry C. Chen, Vincent C. Wen

Proceedings Volume 12750, 127500N (2023) https://doi.org/10.1117/12.2688127

KEYWORDS: Pellicles, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Reticles, Scanners, Inspection, High volume manufacturing, Transmittance, Contamination

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EUV lithography is a key technology in the semiconductor industry and using pellicle that protects reticle from contamination during lithography process has become increasingly important. In this paper, different types of pellicles showing 82~>95% EUV transmittance and wafer moves 5K~50k under different transmittances, scanner powers and resists have been demonstrated for high volume wafer production at this work. For pellicle particle quality, we developed new inspection tool to achieve >1um pinhole-free and with significant defectivity reduction compared to previous one. Almost no fall-on rate is validated for real wafer production. Furthermore, this work develops full infrastructure, which include pellicle-making, pellicle-mounting and through pellicle inspection are validated to provide simple and robust production capability. Our EUV pellicle frame design shows fully compatibility with advanced 193nm reticle pelliclemounting process. Now previous EUV pellicle solution is ready to support advanced nodes application. The other key indices for high wafer throughput and cost reduction are high pellicle transmittance and durability. The pellicle optical performances (EUV transmittance, EUVT uniformity and EUV reflectance) are comparable to the previous solution. Moreover, no negative effects on wafer critical dimension uniformity (CDU) regarding to mask with and without pellicle mounting. In this work, a high-volume manufacturing (HVM) EUV pellicle with excellent defect and durability have been successfully qualified for the needs of advanced node productions.

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