Solar cell efficiency improvement is a significant research focus. To enhance the separation and reduce the recombination of photogenerated carriers in narrow bandgap GaAs nanowire solar cells (NWSCs), we propose a GaAs-GaAs1-xSbx-GaAs heterostructure NWSCs model. Adjusting the Sb concentration in GaAs1-xSbx modifies the energy band structure, effectively separating photogenerated electron-hole pairs. Increasing Sb concentration significantly boosts short circuit current density and power conversion efficiency. At x = 0.34, we achieve a short circuit current density (Jsc) of 28.3 mA·cm-2, an open-circuit voltage (Voc) of 0.93 V, and a 23.1% power-conversion efficiency (PCE) under AM 1.5G spectrum. Then, the distribution of electrons and holes in the transport process of the whole NWSCs is simulated when the Sb concentration is set to 0.34, which confirms electron separation to n-type GaAs and hole separation to p-type GaAs at x = 0.34, effectively. Moreover, the device exhibits an external quantum efficiency (EQE) of 95.9%.
Mechanical transfer electrode can effectively reduce the contact surface between the electrode and semiconductor material, however this method has not been applied to improve the performance of photoelectric devices. In this paper, MoS2 thin film photodetectors are fabricated by this novel method. Compared with the MoS2 thin film photodetectors prepared by the traditional hot evaporation method, the dark current of the transfer device decreased by nearly one order of magnitude, reaching 4.6 × 10-7 A, and the detectivity also increased significantly to 2.1 × 1010 Jones. All these results show that the mechanical transfer electrode can optimize the contact interface between the electrode and semiconductor material to achieve a higher performance photodetector.
GaAs nanowires have widely applied in infrared devices in the past few years. However, the performance of GaAs nanowire photodetectors is strongly limited by the problem of large surface state density. At the same time, onedimensional GaAs nanowire as photosensors for infrared detection has been seldom studied. In this paper, a single GaAs nanowire infrared photodetector have been successfully fabricated and Ar plasma treatment is performed on the device to improve the performance. The treated GaAs nanowire device exhibits high responsivity of 108 A/W, which is about 6 times larger than the original one (~18 A/W). Besides, the external quantum efficiency up to 25312 % and the detectivity up to 9.21×1011 cmHz0.5W-1. At the same time, the response time τr is significantly reduces from 86.40 ms to 3.36 ms, and the recovery time τf is almost remained as 212.48 ms. The significant enhancement is due to the improvement of nanowires surface quality. These results demonstrate that GaAs nanowire is an outstanding material in infrared field devices and plasma treatment is an effective way to realize high performance nanowire photodetectors.
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