Prof. Fedir F. Sizov Profile

Prof. Fedir F. Sizov

Dept Head at VE Lashkaryov Institute of Semiconductor Physics

SPIE Involvement:

Author

Publications (55)

SPIE Journal Paper | 25 August 2023

Study of object detection in linear terahertz imaging systems

Mykola Kovbasa, Aleksandr Golenkov, Anna Shevchik-Shekera, Fedir Sizov

OE, Vol. 62, Issue 08, 083104, (August 2023) https://doi.org/10.1117/12.10.1117/1.OE.62.8.083104

KEYWORDS: Object detection, Terahertz radiation, Scanners, Education and training, Image processing, Optical engineering, Neural networks, Millimeter wave imaging, Imaging systems, Body scanners

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SPIE Journal Paper | 10 December 2015

Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors

Fedir Sizov, Zinoviia Tsybrii, Vyacheslav Zabudsky, Oleksandr Golenkov, Volodymyr Petryiakov, Sergey Dvoretsky, Nikolai Michailov, Anna Shevchik-Shekera, Ihor Lysiuk, Ernesto Dieguez

OE, Vol. 54, Issue 12, 127102, (December 2015) https://doi.org/10.1117/12.10.1117/1.OE.54.12.127102

KEYWORDS: Sensors, Terahertz radiation, Infrared sensors, Infrared detectors, Antennas, Mercury cadmium telluride, Infrared imaging, Infrared radiation, Semiconductors, Bolometers

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Proceedings Article | 13 May 2015 Paper

MCT as sub-terahertz and infrared detector

Fiodor Sizov, Vyacheslav Zabudsky, Sergey Dvoretsky, Vladimir Petryiakov, Aleksandr Golenkov, Katerina Andreyeva, Zinoviia Tsybrii, Anna Shevchik-Shekera, Ernesto Dieguez

Proceedings Volume 9483, 94830V (2015) https://doi.org/10.1117/12.2176854

KEYWORDS: Sensors, Infrared detectors, Infrared sensors, Terahertz radiation, Antennas, Semiconductors, Thermography, Infrared radiation, Bolometers, Photoresistors

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Proceedings Article | 24 September 2013 Paper

The dynamic range of THz broadband FET detectors

D. But, N. Diakonova, C. Drexler, O. Drachenko, K. Romanov, O. Golenkov, F. Sizov, A. Gutin, M. Shur, S. Ganichev, W. Knap

Proceedings Volume 8846, 884612 (2013) https://doi.org/10.1117/12.2024226

KEYWORDS: Field effect transistors, Terahertz radiation, Sensors, Free electron lasers, Transistors, Antennas, Indium gallium arsenide, Electron transport, Signal detection, Pulsed laser operation

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SPIE Journal Paper | 15 March 2013

Millimeter-wave narrow-gap uncooled hot-carrier detectors for active imaging

Fedir Sizov, Vyacheslav Zabudsky, Aleksandr Golenkov, Anya Shevchik-Shekera

OE, Vol. 52, Issue 03, 033203, (March 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.3.033203

KEYWORDS: Sensors, Antennas, Terahertz radiation, Field effect transistors, Bolometers, Signal detection, Image sensors, Active sensors, Resistance, Silicon

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Proceedings Article | 18 December 2012 Paper

Mm-wave hybrid narrow-gap hot-carrier and Schottky diodes detector arrays

F. Sizov, V. Zabudsky, A. Golenkov, V. Petriakov, S. Dvoretski, Z. Tsybrii

Proceedings Volume 8550, 855027 (2012) https://doi.org/10.1117/12.979768

KEYWORDS: Sensors, Antennas, Terahertz radiation, Field effect transistors, Bolometers, Diodes, Silicon, Resistance, Imaging systems, Semiconductors

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Proceedings Article | 15 October 2012 Paper

Terahertz detection and emission by field-effect transistors

Wojciech Knap, Nina Dyakonova, Franz Schuster, Dominique Coquillat, Frédéric Teppe, Benoît Giffard, Dmytro But, Oleksander Golenkov, Fedor Sizov, Takayuki Watanabe, Youichi Tanimoto, Taiichi Otsuji

Proceedings Volume 8496, 84960I (2012) https://doi.org/10.1117/12.930091

KEYWORDS: Terahertz radiation, Sensors, Field effect transistors, Silicon, Transistors, Antennas, Signal detection, Terahertz detection, Plasma, Amplifiers

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Proceedings Article | 22 September 2011 Paper

THz/sub-THz detector based on electrons and holes heating by electromagnetic wave propagating along Hg1-xCdxTe layer

F. Sizov, V. Zabudsky, V. Dobrovolsky, N. Momot, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk, S. Bunchuk, N. Mikhailov, V. Varavin

Proceedings Volume 8167, 816728 (2011) https://doi.org/10.1117/12.896580

KEYWORDS: Sensors, Electrons, Bolometers, Terahertz radiation, Antennas, Semiconductors, Electromagnetic radiation, Waveguides, Signal detection, Wave propagation

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Proceedings Article | 16 May 2011 Paper

Electro-optical effects in 2D macroporous silicon structures with nanocoatings

Lyudmyla Karachevtseva, Yuriy Goltviansky, Oleg Lytvynenko, Konstantin Parshyn, Fedir Sizov, Olena Stronska

Proceedings Volume 8071, 807103 (2011) https://doi.org/10.1117/12.885687

KEYWORDS: Silicon, Nano coatings, Nanocrystals, Absorption, Silica, Scattering, Electro optics, Light scattering, Nickel, Electromagnetic radiation

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Proceedings Article | 5 November 2010 Paper

THz/sub-THz narrow-gap semiconductor detector

F. Sizov, V. Dobrovolsky, V. Zabudsky, N. Momot, Z. Tsybrii, N. Michailov, S. Dvoretskii

Proceedings Volume 7854, 785433 (2010) https://doi.org/10.1117/12.869983

KEYWORDS: Bolometers, Electrons, Sensors, Semiconductors, Terahertz radiation, Antennas, Resistance, Electromagnetic radiation, Mercury cadmium telluride, Waveguides

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Proceedings Article | 30 April 2009 Paper

Mm- and THz-waves detector on the base of narrow-gap semiconductors

F. Sizov, V. Dobrovolsky, V. Zabudsky, Yu. Kamenev, N. Momot, J. Gumenjuk-Sychevska

Proceedings Volume 7309, 73090M (2009) https://doi.org/10.1117/12.819924

KEYWORDS: Sensors, Terahertz radiation, Semiconductors, Bolometers, Resistance, Temperature metrology, Antennas, Infrared sensors, Detector development, Mercury cadmium telluride

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Proceedings Article | 27 September 2008 Paper

MCT detectors: from IR to sub-mm and mm wavelength bands

F. Sizov, V. Vasiliev, J. Gumenjuk-Sichevska, Yu. Kamenev, S. Dvoretsky, N. Mikhailov

Proceedings Volume 7100, 71002C (2008) https://doi.org/10.1117/12.797436

KEYWORDS: Sensors, Terahertz radiation, Photodiodes, Bolometers, Semiconductors, Photons, Infrared sensors, Manufacturing, Infrared detectors, Superconductors

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Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and their dependences on thickness and doping both for IR and THz regions are discussed. It is shown by comparison of experimental data and modeling of I-V dark current characteristics that MCT photodiode ultimate electrical characteristics are limited by diffusion current in n⁺-n^--p junctions and by current via the deep traps in the gap with position E_t= 0.7 E_g above the valence band and concentrations N_t = (1.0-5.5)•10¹⁵ cm^-3 which are comparable with donor concentration in n^--region Nd = (1.1-1.8)•1015 cm^-3. Detector array parameters for a wavelength range 8-12 microns are: detectivity D*=1.9•10¹¹ cm•Hz^1/2/W, noise equivalent difference temperature NEDT ≈ 9 mK, dynamical resistance R ≈ 4·10⁹ Ohm for the reverse biases ΔV = 0.1-0.2 V. Also, it is shown that MCT layers can be successfully used as sub-mm or mm wave ambient temperature or moderately cooled hot electron bolometers. Thus, in addition to the wavelength range from SWIR to VLIR, where the MCT detectors are employed mainly as photodiodes or photoresistors, they can be used as sub-mm or mm wave detectors in the range from 190 microns to 8 mm. They can be employed here as semiconductor hot electron bolometers (SHEB). Measurements performed at electromagnetic wave frequencies ν = 37, 55, 77 GHz, and also at 0.89 and 1.58 THz with non-optimized Hg_0.8Cd_0.2Te bolometer prototype, has confirmed the basic concepts of SHEB. At ν = 0.89 THz, 77 GHz and 37 GHz the signal temperature dependencies were measured too. At 77 K the SHEB sensitivity at ν = 37 and 77 GHz is increasing up to two orders compared to room temperature data. The sensitivity S_ν ≈ 2 V/W at 300 K, and calculated both Johnson-Nyquist and generation-recombination noise values give estimations of SHEB NEP ~ 4•10^-10 W at band-width Δf = 1 Hz and ν = 37 GHz.

Proceedings Article | 27 September 2008 Paper

Nature of group-III related deep centers in lead telluride based semiconductors: Ga doping from vapor phase

Taras Petrenko, Sergey Plyatsko, Fiodor Sizov

Proceedings Volume 7100, 71002O (2008) https://doi.org/10.1117/12.798361

KEYWORDS: Gallium, Lead, Doping, Chemical species, Crystals, Molecules, Tellurium, Semiconductors, Molecular interactions, Group IV-VI semiconductors

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Proceedings Article | 19 April 2006 Paper

THz semiconductor hot electron bolometer (SHEB)

V. N. Dobrovolsky, F. Sizov

Proceedings Volume 6194, 61940O (2006) https://doi.org/10.1117/12.662265

KEYWORDS: Semiconductors, Terahertz radiation, Bolometers, Sensors, Plasma, Resistance, Electronics, Field effect transistors, Mercury, Cadmium

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Proceedings Article | 28 February 2006 Paper

Charge carrier transport in barrier “in-macroporous silicon” structures

Lyudmyla Karachevtseva, Volodimir Onishchenko, Fiodor Sizov, Andriy Sukach, Volodimir Teterkin

Proceedings Volume 6127, 61270O (2006) https://doi.org/10.1117/12.644143

KEYWORDS: Silicon, Resistance, Manufacturing, Metals, Temperature metrology, Crystals, Hydrogen, Indium, Resistors, Semiconductors

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Proceedings Article | 14 February 2006 Paper

THz semiconductor hot electron bolometer

V. Dobrovolsky, F. Sizov

Proceedings Volume 6120, 612009 (2006) https://doi.org/10.1117/12.650341

KEYWORDS: Semiconductors, Bolometers, Terahertz radiation, Sensors, Mercury, Cadmium, Tellurium, Resistance, Absorption, Manufacturing

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Proceedings Article | 15 October 2005 Paper

Comparative analysis of 4x288 readouts and FPAs

Fiodor Sizov, Vladimir Reva, Yurii Derkach, Vladimir Vasiliev

Proceedings Volume 5964, 596416 (2005) https://doi.org/10.1117/12.628450

KEYWORDS: Charge-coupled devices, Readout integrated circuits, CMOS technology, Transistors, Amplifiers, Manufacturing, Photodiodes, Staring arrays, Multiplexers, Dielectrics

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Comparative analysis of four 4x288 different designed readouts elaborated at the Institute of Microdevices and the Institute of Semiconductor Physics is presented. Also some features of design 576x6 readouts adduced. All the readouts have the direct injection input circuit with incorporated cells allowing testing without photodiodes. TDI registers have three delay elements between neighbor inputs. Some characteristics of 4x288 FPAs with mercury-cadmium-telluride TDI arrays are cited too. 2-phase and 4-phase CCD readouts (2.5 micron technology) have different channel types (surface, buried and semi-buried), which include 10 bit TDI registers in each channel, and 18 channel multiplexing to 16 outputs. Two polysili-con, one metal level and 400 A dielectric layers were used. The readouts characteristics: charge handling capacity, transfer characteristics, output nonlinearity characteristics, bias dispersion, etc. are presented. CCD technology used for data multiplication results in crosstalk increase, because of the presence of rather considerable transfer inefficiency at cryogenic temperatures. Using 2.5 micron CCD technology and 2.0 CMOS technology the readouts, which include the digital interface for dead pixels deselection, preliminary amplification circuits, 36 channel multiplication by CCD registers and 2 beat multiplication by analogue switches to 4 output amplifiers, were manufactured. One pocket CMOS technology with two polysilicon, two metal levels and 350 A dielectric layers were used. To increase the linearity of transfer characteristics and noise level decrease at the output of CCD the circuits of charge-voltage conversion on the base of operational amplifiers were used. This allows getting circuits with parameters close to those obtained by 0.8 - 1.0 micron CMOS technology. Also some characteristics of 4x288 readouts designed by 1.2 micron CMOS technology are discussed (two polysilicon and two metal levels). This one includes the circuits of auxiliary electronics. Comparative analysis shows that the readouts mentioned are different in numbers of outputs, external service but have rather similar parameters.