In this paper, we present a method for linking a finite element Maxwell's equation solver with a scalar lithography simulator, iPHOTO-II. The combined simulator takes the mask topography and the stepper parameters as input and simulates the resist profile on the wafer plane. The accuracy of the simulator is demonstrated by comparing simulation results with experimental data over a wide range of focus, exposure and mask dimensions. The simulator is used to predict the performance of a phase edge phase shift mask. It is revealed that the true position of the line center in a phase edge PSM is shifted slightly from the location given by geometric projection. Biasing rules for compensating for this location shift are presented.
Partial coherent imaging in a high NA stepper is treated with the source integration method. Image formation in 3D is accomplished by the propagation and interference of plane waves. This approach allows the extensive use of FFT and leads to efficient computation of the latent image. In order to further reduce the computation time, we propose a sufficient condition for the grid density in an image plane based on the sampling theorem. Finally, we present a semi-analytical method for the modeling of post exposure bake process in 3D. With these enhancements in the algorithm, a typical 3D latent image problem can be solved in a few second on a workstation.
This paper describes a three-dimensional computer modeling technique for alignment system simulation, and some example calculations. The technique has been developed to address issues of alignment and overlay accuracy for future generation VLSI technology. The analytical basis is a general finite element electromagnetic wave propagation code, EMFlex, that rigorously simulates light scattering from the 3-D alignment mark. Using the Nikon Laser Step Alignment (LSA) system as a model instrument, the overlay error and signal shape are simulated. Examples of an idealized asymmetric metal mark are studied. Preliminary results suggest that the rigorous simulations are substantially different from the one-dimensional Fresnel approximations that have been used previously.
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