Mr. François Martin Profile

François Martin

at CEA-LETI

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Proceedings Article | 16 February 2020 Presentation + Paper

Analysis of InGaN surfaces after chemical treatments and atomic layer deposition of Al2O3 for µLED applications

Corentin Le Maoult, David Vaufrey, François Martin, Eugénie Martinez, Emmanuel Nolot, Stéphane Cadot, Etienne Gheeraert

Proceedings Volume 11280, 112801C (2020) https://doi.org/10.1117/12.2544787

KEYWORDS: Aluminum, Atomic layer deposition, Sulfur, Indium gallium nitride, Indium, Light emitting diodes, Gallium, Chemical analysis, Oxygen, Quantitative analysis

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A deep understanding of semiconductors-dielectrics interface properties will provide guidelines to optimize efficient passivation solutions for InGaN/GaN based μLED. To this end, the quantum wells (QW) semiconductor is of tremendous interest since a lot of surface recombinations are likely to occur at LED active regions edges and are probably responsible for the low μLED efficiencies. Thus we discuss in this paper about X-ray photoemission (XPS) and wavelength dispersive X-ray fluorescence (WDXRF) characterizations of In_0.1Ga_0.9N surfaces after acid, basic or sulfur based chemical treatments followed or not by atomic layer deposition (ALD) of Al₂O₃ thin films with TMA/H₂O or TMA/O₂ plasma (plasma enhanced ALD) at 250°C. Depending on chemical treatments, variations of indium related XPS peaks were observed, which did not seem to be significantly affected by deposition of Al₂O₃ whatever the oxidizing precursor. The extreme surface concentration of indium was probably reduced, suggesting that some chemical pre-treatments for cleaning or passivation steps would have a direct impact on InGaN QW properties at LED edges. After sulfur based chemical treatments, even if sulfur was hardly detected by XPS, complementary measurements by WDXRF and subsequent calibration of the sulfur signal supported evaluation of a low surface concentration of sulfur. Changes of Al₂O₃ related XPS peaks suggested that the various studied pre-treatments induced different nucleations of first ALD cycles. Then, a clear variation of InGaN surfaces hydrolysis depending on surface treatments was finally highlighted by WDXRF based counting measurements, opening the way to a better understanding of first Al₂O₃ layers nucleation on InGaN.

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