The infrared detector readout circuit operates at cryogenic temperature. Due to freeze-out effect and kink effect, the properties of CMOS devices will change at cryogenic temperature. Some works have studied the static operating characteristics of CMOS at cryogenic temperature. However, previous studies are most above 50K. In this paper, CMOS devices fabricated by SMIC 0.18 um technology are measured and characterized electrically over the temperature range from 8.5 K to 300 K. Based on the measurements, the reasons for the changes in threshold voltage and freeze-out effect is analyzed from the perspective of physical mechanism. The low RMS error (RMS error is reduced to less than 6%) is obtained by modifying the parameters of the device at various temperatures, and parameter library is established. In this work, a method to obtain low Root-Mean-Square (RMS) error is proposed, which is applied to temperatures ranging from 8.5 K to 300 K. The model simulation results fit well with the output and transfer characteristic curves of the designed MOSFET. This work obtains a cryogenic temperature model parameter library suitable for our designed CMOS readout circuit and provides device model guidance for subsequent complex circuit structure design such as cryogenic temperature CTIA.
A 320×256 readout integrated circuit (ROIC) with a pixel pitch of 30μm is presented for solar-blind AlGaN ultraviolet focal array plane (FPA). Capacitor feedback transimpendance amplifier (CTIA) has been selected as the input structure of the ROIC because of its excellent performance. A novel cascade amplifier with a symmetrical differential input stage is designed for input stage of CTIA, and an ultra-low capacitance with a value of 10fF is in the feedback loop of the amplifier as integral capacitor. Furthermore, the ROIC read out in a rolling shutter mode by using cascade D flip-flops. The ROIC has been fabricated 0.35μm 2P4M mixed signal CMOS process and interfaced with AlGaN solar-blind ultraviolet focal array plane (UVFPA). The test result shows that 320×256 AlGaN UVFPA has a wide dynamic range of 88.2dB with 5V power supply and has a high injection efficiency of 98.2%.
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