The transmission spectra of ZnO:Al films and I-V-characteristic of the isotype heterojunction ZnO:Al/n-Si fabricated by the method of RF magnetron sputtering of thin ZnO:Al films onto n-Si crystalline substrates were investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse biases are analyzed. The influence of temperature on the parameters of the heterojunction is determined. The photoelectric properties of the heterostructure are analyzed.
The results of investigation of optical and electrical properties of thin films of р-(3ZnTe)0.5(In2Te3)0.5 obtained by thermal evaporation and heterostructures based on them are presented in the paper. On the basis of the analysis of the spectra of light absorption, the optical width of the band gap and its dependence on the sputtering mode is determined. The heterostructures of n-Si/p-(3ZnTe)0.5(In2Te3)0.5 and n-CdTe/p-(3ZnTe)0.5(In2Te3)0.5 were obtained and they have straightening properties. Based on the analysis of the temperature dependences of the I-V characteristics, the presence of a tunneling mechanism of electron motion at forward and reverse bias through the energy barrier of the heterojunction is established.
The conditions for the production of rectifying heterostructures p-Сu2ZnSnSe4/n-CdTe by the method of RF-magnetron sputtering of Сu2ZnSnSe4 films onto crystalline substrates n-CdTe were investigated. Mechanisms of forming direct and reverse currents through the heterojunction were set based on the analysis of temperature dependences of I-V characteristics. It is established that the heterostructure generates idle voltage VOC = 0.42 V, short-circuit current ISC = 0.175 mA/cm2 and the fill factor FF = 0.4 when illuminated at 80 mW/cm2.
Optical properties of thin films cadmium chalcogenide produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and reflection coefficients are studied in a range from 0.4 to 1.1 μm. On the basis of the experiments of transmission and reflection coefficients the index of refraction and optical width of the bandgap of thin films under study are measured by the Swanepoel's method аnd method based on measuring of the transmission and reflection coefficients. It was found out that there are direct interzone optical transitions in the thin films under study.
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