Molybdenum ditelluride (2H-MoTe2) has attracted extension research interest for its unconventional features and devices application potentials. Field effect transistors (FETs) based on 2H -MoTe2 usually exhibit ambipolar electric properties, however, integrating both n-type and p-type FETs is of great significance for the device applications. Here, we found that the electric properties of the MoTe2 FETs could be reversible tuned with gas molecules adsorption and magnesium (Mg) doping. After the gas molecules adsorption, the MoTe2 FET is p-type doped and shows hole dominant conduction performance. In the vacuum, the p-type performance of the MoTe2 FET is effectively weakened after the gas molecules desorption. The similar phenomenon happens at the magnesium (Mg) evaporated on the MoTe2 FETs. After the Mg atoms surface covering, the MoTe2 FET is n-type doped and shows electron dominant conduction performance. In the air, the p-type performance of MoTe2 FET is recovered after the Mg oxidation. These results display an effectively method for reversible controlling the MoTe2 FETs.
Recently, heterostructures, combining the unique advantages of both graphene and transition metal dichalcogenides (TMDs, also known as MX2), have exhibited extraordinary photo-electrical properties, thus attracted tremendous interests worldwide. In this paper, we overviewed recent progress of MX2/Graphene van der Waals heterostructures, including the preparation methods, relevant parameters in opto-electronic measurements, physical mechanisms, existing experimental results and encountered problems. Here, we focus to cover the development of entire field, and provide a comprehensive and accurate understanding concerning this field, which may be helpful for interested researchers in this area.
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