Dr. Gerard M. Schmid Profile

Dr. Gerard M. Schmid

Senior Template Scientist at Canon Nanotechnologies Inc

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Author

Publications (24)

Proceedings Article | 25 May 2010 Paper

Defect reduction of patterned media templates and disks

Kang Luo, Steven Ha, John Fretwell, Rick Ramos, Zhengmao Ye, Gerard Schmid, Dwayne LaBrake, Douglas Resnick, S. Sreenivasan

Proceedings Volume 7748, 77480A (2010) https://doi.org/10.1117/12.866882

KEYWORDS: Particles, Inspection, Lithography, Ozone, Defect inspection, Servomechanisms, Tantalum, Manufacturing, Coating, Contamination

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Proceedings Article | 1 April 2010 Paper

Inspection of imprint lithography patterns for semiconductor and patterned media

Douglas Resnick, Gaddi Haase, Lovejeet Singh, David Curran, Gerard Schmid, Kang Luo, Cindy Brooks, Kosta Selinidis, John Fretwell, S. Sreenivasan

Proceedings Volume 7637, 76370R (2010) https://doi.org/10.1117/12.848391

KEYWORDS: Inspection, Photomasks, Lithography, Particles, Semiconducting wafers, Defect detection, Semiconductors, Optical inspection, Servomechanisms, Defect inspection

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Proceedings Article | 23 September 2009 Paper

Jet and flash imprint lithography for the fabrication of patterned media drives

Gerard Schmid, Cynthia Brooks, Zhengmao Ye, Steve Johnson, Dwayne LaBrake, S. V. Sreenivasan, Douglas Resnick

Proceedings Volume 7488, 748820 (2009) https://doi.org/10.1117/12.833366

KEYWORDS: Servomechanisms, Lithography, Magnetism, Inspection, Electron beam lithography, Optical lithography, Beam propagation method, Data storage, Head, Photoresist processing

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Proceedings Article | 18 March 2009 Paper

Step and flash imprint lithography for manufacturing patterned media

Cynthia Brooks, Gerard Schmid, Mike Miller, Steve Johnson, Niyaz Khusnatdinov, Dwayne LaBrake, Douglas Resnick, S. V. Sreenivasan

Proceedings Volume 7271, 72711L (2009) https://doi.org/10.1117/12.815016

KEYWORDS: Magnetism, Optical lithography, Lithography, Silica, Chromium, Etching, Beam propagation method, Servomechanisms, Manufacturing, Data storage

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Proceedings Article | 19 May 2008 Paper

32 nm imprint masks using variable shape beam pattern generators

Kosta Selinidis, Ecron Thompson, Gerard Schmid, Nick Stacey, Joseph Perez, John Maltabes, Douglas Resnick, Jeongho Yeo, Hoyeon Kim, Ben Eynon

Proceedings Volume 7028, 70280R (2008) https://doi.org/10.1117/12.793034

KEYWORDS: Semiconducting wafers, Line width roughness, Lithography, Etching, Photomasks, Critical dimension metrology, Beam shaping, Overlay metrology, Manufacturing, Line edge roughness

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Proceedings Article | 19 May 2008 Paper

Linewidth roughness characterization in step and flash imprint lithography

Gerard Schmid, Niyaz Khusnatdinov, Cynthia Brooks, Dwayne LaBrake, Ecron Thompson, Douglas Resnick

Proceedings Volume 7028, 70280A (2008) https://doi.org/10.1117/12.796015

KEYWORDS: Line width roughness, Photomasks, Critical dimension metrology, Electron beam lithography, Lithography, Etching, Semiconducting wafers, Scanning electron microscopy, Optical lithography, Line edge roughness

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Proceedings Article | 2 May 2008 Paper

Controlling linewidth roughness in step and flash imprint lithography

Gerard Schmid, Niyaz Khusnatdinov, Cynthia Brooks, Dwayne LaBrake, Ecron Thompson, Douglas Resnick, Jordan Owens, Arnie Ford, Shiho Sasaki, Nobuhito Toyama, Masaaki Kurihara, Naoya Hayashi, Hideo Kobayashi, Takashi Sato, Osamu Nagarekawa, Mark Hart, Kailash Gopalakrishnan, Rohit Shenoy, Ron Jih, Ying Zhang, Edmund Sikorski, Mary Beth Rothwell, Shusuke Yoshitake, Hitoshi Sunaoshi, Kenichi Yasui

Proceedings Volume 6792, 67920W (2008) https://doi.org/10.1117/12.798936

KEYWORDS: Line width roughness, Lithography, Critical dimension metrology, Etching, Semiconducting wafers, Line edge roughness, Chemically amplified resists, Vestigial sideband modulation, Optical lithography, Gaussian beams

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Proceedings Article | 14 March 2008 Paper

Minimizing linewidth roughness for 22-nm node patterning with step-and-flash imprint lithography

Gerard Schmid, Niyaz Khusnatdinov, Cynthia Brooks, Dwayne LaBrake, Ecron Thompson, Douglas Resnick

Proceedings Volume 6921, 692109 (2008) https://doi.org/10.1117/12.772956

KEYWORDS: Line width roughness, Photomasks, Critical dimension metrology, Optical lithography, Etching, Electron beam lithography, Semiconducting wafers, Lithography, Scanning electron microscopy, Line edge roughness

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Proceedings Article | 30 October 2007 Paper

The development of full field high resolution imprint templates

Shusuke Yoshitake, Hitoshi Sunaoshi, Kenichi Yasui, Hideo Kobayashi, Takashi Sato, Osamu Nagarekawa, Ecron Thompson, Gerard Schmid, Douglas Resnick

Proceedings Volume 6730, 67300E (2007) https://doi.org/10.1117/12.747568

KEYWORDS: Photomasks, Etching, Chromium, Image processing, Lithography, Reticles, Optical proximity correction, Image resolution, Scanning electron microscopy, Silica

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Critical to the success of imprint lithography and Step and Flash Imprint Lithography (S-FIL^®) in particular is the manufacturing 1X templates. Several commercial mask shops now accept orders for 1X templates. Recently, there have been several publications addressing the fabrication of templates with 32nm and sub 32nm half pitch dimensions using high resolution Gaussian beam pattern generators. Currently, these systems are very useful for unit process development and device prototyping. In this paper, we address the progress made towards full field templates suitable for the fabrication of CMOS circuits. The starting photoplate consisted of a Cr hard mask (≤ 15nm) followed by a thin imaging layer of ZEP 520A. The EBM-5000 and the EBM-6000 variable shape beam pattern generators from NuFlare Technology were used to pattern the images on the substrates. Several key specifications of the EBM-6000, resulting in improved performance over the EBM-5000 include higher current density (70 A/cm²), astigmatism correction in the subfields, optimized variable stage speed control, and improved data handling to increase the maximum shot count limitation. To fabricate the template, the patterned resist serves as an etch mask for the thin Cr film. The Cr, in turn, is used as an etch block for the fused silica. A mesa is formed by etching the non-active areas using a wet buffered oxide etch (BOE) solution. The final step in the template process is a dice and polish step used to separate the plate into four distinct templates. Key steps in the fabrication process include the imaging and pattern processes. ZEP520A was chosen as the e-beam resist for its ability to resolve high resolution images. This paper documents the resolution and image placement capability with the processes described above. Although ZEP520A is slow relative to chemically amplified e-beam resists, it is only necessary to pattern 1/16^th the area relative to a 4X reduction mask. Write time calculations for 1X templates have also been performed, and are compared to 4X photomasks.

Proceedings Article | 12 May 2007 Paper

Step and flash imprint lithography template fabrication for emerging market applications

Douglas Resnick, Gerard Schmid, Mike Miller, Gary Doyle, Chris Jones, Dwayne LaBrake

Proceedings Volume 6607, 66070T (2007) https://doi.org/10.1117/12.728943

KEYWORDS: Semiconducting wafers, Lithography, Photonic crystals, Etching, Silica, Electron beam lithography, Chromium, Silicon, Light emitting diodes, Polymethylmethacrylate

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Proceedings Article | 3 May 2007 Paper

Electron beam directed repair of fused silica imprint templates

Gerard Schmid, Douglas Resnick, Rainer Fettig, Klaus Edinger, Steven Young, William Dauksher

Proceedings Volume 6533, 65330P (2007) https://doi.org/10.1117/12.736921

KEYWORDS: Silica, Photomasks, Lithography, Etching, Electron beams, Scanning electron microscopy, Chromium, Atomic force microscopy, Nanoimprint lithography, Liquids

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Proceedings Article | 15 March 2007 Paper

Toward 22 nm for unit process development using step and flash imprint lithography

Gerard Schmid, Ecron Thompson, Nick Stacey, Douglas Resnick, Deirdre Olynick, Erik Anderson

Proceedings Volume 6517, 651717 (2007) https://doi.org/10.1117/12.718155

KEYWORDS: Lithography, Chromium, Photomasks, Etching, Semiconducting wafers, Electron beams, Critical dimension metrology, Silica, Optical lithography, Photoresist processing

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Proceedings Article | 6 May 2005 Paper

Direct imprinting of dielectric materials for dual damascene processing

Michael Stewart, Jeffery Wetzel, Gerard Schmid, Frank Palmieri, Ecron Thompson, Eui Kyoon Kim, David Wang, Ken Sotodeh, Kane Jen, Stephen Johnson, Jianjun Hao, Michael Dickey, Yukio Nishimura, Richard Laine, Douglas Resnick, C. Willson

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599977

KEYWORDS: Dielectrics, Silicon, Copper, Semiconducting wafers, Optical lithography, Etching, Lithography, Metals, Nanoimprint lithography, Plasma etching

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Proceedings Article | 4 May 2005 Paper

Using mesoscale simulation to explore photoresist line edge roughness

Jason Meiring, Timothy Michaelson, Andrew Jamieson, Gerard Schmid, Carlton Willson

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599736

KEYWORDS: Line edge roughness, Monte Carlo methods, Molecules, Polymers, Photoresist materials, Image quality, Stochastic processes, Computer simulations, Lithography, Diffusion

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Proceedings Article | 20 May 2004 Paper

Mesoscale modeling for SFIL simulating polymerization kinetics and densification

Ryan Burns, Stephen Johnson, Gerard Schmid, Eui Kim, Michael Dickey, Jason Meiring, Sean Burns, Nicholas Stacey, C. Grant Willson, Diana Convey, Yi Wei, Peter Fejes, Kathleen Gehoski, David Mancini, Kevin Nordquist, William Dauksher, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536216

KEYWORDS: Etching, Polymerization, Molecules, Monte Carlo methods, Finite element methods, Lithography, Ultraviolet radiation, Molecular interactions, Scanning electron microscopy, Optical lithography

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Proceedings Article | 14 May 2004 Paper

Resolution limitations in chemically amplified photoresist systems

Gerard Schmid, Michael Stewart, Chia-Ying Wang, Bryan Vogt, Vivek Prabhu, Eric Lin, C. Willson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536656

KEYWORDS: Diffusion, Photoresist materials, Polymers, Molecules, Scattering, Interfaces, Lithography, Distance measurement, Manufacturing, Chemically amplified resists

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Proceedings Article | 12 June 2003 Paper

Diffusion-induced line-edge roughness

Michael Stewart, Gerard Schmid, Dario Goldfarb, Marie Angelopoulos, C. Grant Willson

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483734

KEYWORDS: Diffusion, Surface roughness, Line edge roughness, Polymers, Atomic force microscopy, Monte Carlo methods, Lithography, Photoresist materials, Molecules, Photomasks

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Proceedings Article | 12 June 2003 Paper

Fundamental study of photoresist dissolution with real-time spectroscopic ellipsometry and interferometry

Sean Burns, Gerard Schmid, Brian Trinque, James Willson, Jennifer Wunderlich, Pavlos Tsiartas, James Taylor, Ryan Burns, C. Wilson

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485182

KEYWORDS: Polymers, Interferometry, Data modeling, Photoresist materials, Water, Ellipsometry, Spectroscopic ellipsometry, Reflectivity, Refraction, Thin films

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Proceedings Article | 24 July 2002 Paper

Acid mobility in chemically amplified photoresists

Michael Stewart, Darren Becker, Timothy Stachowiak, Gerard Schmid, Timothy Michaelson, Hoang Tran, C. Grant Willson

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474168

KEYWORDS: Diffusion, Polymers, Glasses, Photoresist materials, Molecules, Adaptive optics, Temperature metrology, Systems modeling, Chemical reactions, Chemical analysis

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In a chemically amplified resist the exposure energy is used to generate a catalytic species, which promotes a solubility-switching reaction during a post exposure processing step. Using an absorbed photon to generate a catalyst, instead of using it to directly cause a solubility-switching photochemical reaction, allows for much lower exposure doses to be used for patterning since the catalytic species can eventually promote multiple solubility-switching events instead of just one. Some level of catalyst mobility is necessary to achieve the amplification effect as the catalyst must move from reaction site to reaction site, but any catalyst mobility creates the possibility of movement from exposed regions into unexposed regions causing image blur or line width spreading. As the catalyst diffuses in the resist, it promotes chemical reactions; these chemical reactions complicate analyses of catalyst diffusion by changing the chemical environment of the diffusant. Thus, the material properties of the surrounding resin are changing, sometimes drastically, as the catalyst diffuses. In addition to simple changes in material type, the chemical reaction also generates a transient material state as reaction by-products either remain in the resist film or desorb. The variation in lifetime of this transient state is another factor that must be considered in a full analysis. This work reports a method to separate reaction effects from catalyst diffusion effects. Acid diffusion in polymers which are close structural analogues to poly(4-t-butyloxycarbonyloxystrene) (TBOCST), while being unreactive to diffusing acidic molecules, was studied. Specifically, the diffusion properties of photogenerated perfluorobutanesulfonic acid in the unreactive TBOCST analogues poly(4-isopropyloxycarbonyloxystyrene) and poly(4-neopentyloxycarbonyloxysytrene) are reported. Measuring and understanding diffusion in these analogue polymers provides insight into the more complicated, and more important, reaction-diffusion processes of TBOCST.

Proceedings Article | 24 July 2002 Paper

Mesoscale simulation of positive tone chemically amplified photoresists

Gerard Schmid, Sean Burns, Michael Stewart, C. Grant Willson

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474237

KEYWORDS: Monte Carlo methods, Polymers, Photoresist materials, Ions, Computer simulations, Molecules, Lithography, Line edge roughness, Chemically amplified resists, Polymer thin films

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Proceedings Article | 24 August 2001 Paper

Understanding molecular-level effects during post-exposure processing

Gerard Schmid, Mark Smith, Chris Mack, Vivek Singh, Sean Burns, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436829

KEYWORDS: Polymers, Photoresist materials, Molecules, Photoresist developing, Lithography, Computer simulations, Polymer thin films, 3D modeling, Scanning electron microscopy, Mathematical modeling

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Proceedings Article | 24 August 2001 Paper

Understanding nonlinear dissolution rates in photoresists

Sean Burns, Allen Gardiner, Val Krukonis, Paula Wetmore, Jodie Lutkenhaus, Gerard Schmid, Lewis Flanagin, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436876

KEYWORDS: Polymers, Oxygen, Surface roughness, Picture Archiving and Communication System, Medium wave, Polymer thin films, Photoresist materials, Ionization, FT-IR spectroscopy, Oxidation

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Proceedings Article | 24 August 2001 Paper

Mechanistic understanding of line-end shortening

Michael Stewart, Gerard Schmid, Sergei Postnikov, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436844

KEYWORDS: Diffusion, Polymers, Photomasks, Semiconducting wafers, Imaging systems, Photoresist materials, Diffraction, Printing, Image acquisition, Lithography

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Proceedings Article | 23 June 2000 Paper

Recent advances in a molecular level lithography simulation

Gerard Schmid, Vivek Singh, Lewis Flanagin, Michael Stewart, Sean Burns, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388354

KEYWORDS: Polymers, Computer simulations, Molecules, Diffusion, Lithography, Monte Carlo methods, Photoresist materials, Performance modeling, Deep ultraviolet, Polymer thin films

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Showing 5 of 24 publications

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