Prof. Gray Lin Profile

Prof. Gray Lin

Faculty Member at National Yang Ming Chiao Tung Univ.

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 15 March 2023 Poster + Paper

Photonic-crystal surface-emitting lasers in red wavelength range

Tsung-Yeh Ku, Chi-Hao Wang, Gray Lin

Proceedings Volume 12431, 124310I (2023) https://doi.org/10.1117/12.2647225

KEYWORDS: Red lasers, Etching, Gallium arsenide, Cladding, Pulsed laser operation, Optical transmission, Beam divergence, Aluminium gallium indium phosphide

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Proceedings Article | 30 December 2019 Paper

Relationship between threshold gain and Bragg detuning in photonic-crystal surface-emitting lasers

Zong-Lin Li, Shen-Chieh Lin, Yu-Chen Chen, Gray Lin

Proceedings Volume 11200, 112002U (2019) https://doi.org/10.1117/12.2539876

KEYWORDS: Etching, Quantum wells, Mid-IR, Gallium antimonide, Optical pumping, Photonic crystals, Distributed feedback laser diodes, Bragg gratings

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SPIE Journal Paper | 14 January 2019

Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions

Yu-Chen Chen, Pin-Hsien Hsieh, Gray Lin

JNP, Vol. 13, Issue 01, 016001, (January 2019) https://doi.org/10.1117/12.10.1117/1.JNP.13.016001

KEYWORDS: Mode locking, Semiconductor lasers, Pulsed laser operation, Radio optics, Picosecond phenomena, Sensors, Continuous wave operation, Scanning electron microscopy, Etching, Laser damage threshold

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Proceedings Article | 16 September 2016 Presentation + Paper

Dual-wavelength mode-locking of novel chirped multilayer quantum-dot lasers

Chun-Ping Chiang, Gray Lin, Yu-Chen Chen, Hsu-Chieh Cheng

Proceedings Volume 9919, 99190K (2016) https://doi.org/10.1117/12.2236808

KEYWORDS: Semiconductor lasers, Mode locking, Mode locking, Semiconductor lasers, Indium gallium arsenide, Picosecond phenomena, Etching, Gallium arsenide, Reactive ion etching, Scanning electron microscopy, Imaging spectroscopy, Structural design

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Proceedings Article | 8 May 2013 Paper

Tunable multiwavelength quantum dot external-cavity lasers

Chen-Hung Pai, Gray Lin

Proceedings Volume 8772, 87720V (2013) https://doi.org/10.1117/12.2017500

KEYWORDS: Terahertz radiation, Mirrors, Tunable lasers, Semiconductor lasers, Quantum dots, Optical design, Principal component analysis, Bolometers, Light sources, Coarse wavelength division multiplexing

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Proceedings Article | 15 October 2012 Paper

150nm continuous tuning of external cavity quantum-dot lasers operated below 90 mA

Yu-Chen Chen, Gray Lin, Pei-Yin Su, Hsu-Chieh Cheng

Proceedings Volume 8497, 84970N (2012) https://doi.org/10.1117/12.928905

KEYWORDS: Tunable lasers, Laser damage threshold, Semiconductor lasers, Surgery, Coating, Laser applications, Indium arsenide, Quantum wells, Indium gallium arsenide, Diffraction gratings

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Proceedings Article | 8 May 2008 Paper

Novel chirped multilayer quantum-dot lasers

G. Lin, C. Y. Chang, W. C. Tseng, C. P. Lee, K. F. Lin, R. Xuan, J. Y. Chi

Proceedings Volume 6997, 69970R (2008) https://doi.org/10.1117/12.781955

KEYWORDS: Laser damage threshold, Indium arsenide, Indium gallium arsenide, Gallium arsenide, Temperature metrology, Semiconductor lasers, Structural design, Cryogenics, Semiconductors, Cladding

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Proceedings Article | 1 September 2004 Paper

MBE-grown 1.3 micron InGaAsN/GaAs double QW VCSELs with very low-threshold current density under room temperature CW operation

Chih-Ming Lai, Jyh-Shyang Wang, Ru-Shang Hsiao, Li-Chung Wei, Gray Lin, Kun-Feng Lin, Hui-Yu Liu, Alexey Kovsh, Nikolai Maleev, Daniil Livshits, Jenn-Fang Chen, Jim-Young Chi

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545345

KEYWORDS: Nitrogen, Gallium arsenide, Quantum wells, Vertical cavity surface emitting lasers, Pulsed laser operation, Continuous wave operation, Indium, Plasma, Laser damage threshold, Annealing

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Proceedings Article | 1 July 2003 Paper

High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Daniil Livshits, Alexey Kovsh, Nikolay Maleev, Alexey Zhukov, Victor Ustinov, Nikolai Ledentsov, Zhores Alferov, Dieter Bimberg, Gray Lin, Jim Chi

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.479825

KEYWORDS: Laser damage threshold, Continuous wave operation, Laser applications, Gallium arsenide, Semiconductor lasers, Indium arsenide, Gallium, Indium gallium arsenide, Vertical cavity surface emitting lasers, Temperature metrology

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Proceedings Article | 11 June 2003 Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

Alexey Kovsh, Alexey Zhukov, Nikolay Maleev, Sergei Mikhrin, A. Vasil'ev, Yuri Shernyakov, Daniil Livshits, Mikhail Maximov, D. Sizov, N. Kryzhanovskaya, Nikita Pikhtin, V. Kapitonov, Ilya Tarasov, N. Ledentsov, Victor Ustinov, Jyh-Shyang Wang, Li-Chung Wei, Gray Lin, Jim Chi

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514262

KEYWORDS: High power lasers, Quantum wells, Quantum dots, Gallium arsenide, Semiconductor lasers, Indium arsenide, Indium gallium arsenide, Cladding, Solids, Laser damage threshold

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Showing 5 of 10 publications

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