Dr. Grzegorz Cywinski Profile

Dr. Grzegorz Cywinski

at Institute of High Pressure Physics

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Author

Publications (5)

Proceedings Article | 3 October 2022 Presentation

Towards terahertz optopair based on AlGaN/GaN HEMTs

Maciej Sakowicz, Maksym Dub, Pavlo Sai, Dmitro But, Grzegorz Cywinski, Justinas Jorudas, Artur Šimukovic, Pawel Prystawko, Simonas Indrišiunas, Vitalij Kovalevskij, Sergey Rumyantsev, Irmantas Kašalynas, Wojciech Knap

Proceedings Volume 12230, 1223003 (2022) https://doi.org/10.1117/12.2632980

KEYWORDS: Field effect transistors, Plasma, Terahertz radiation, Transistors, Gallium nitride, Fin field effect transistors, Silicon carbide, Temperature metrology, Resonators, Plasma generation

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Proceedings Article | 5 March 2021 Presentation + Paper

AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime

M. Sakowicz, P. Sai, D. But, G. Cywinski, M. Dub, I. Kašalynas, P. Prystawko, S. Rumyantsev, W. Knap

Proceedings Volume 11685, 116850C (2021) https://doi.org/10.1117/12.2576870

KEYWORDS: Plasma, Field effect transistors, Terahertz radiation, Heterojunctions, Fin field effect transistors, Transistors, Terahertz detection, Gallium nitride, Temperature metrology

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Proceedings Article | 2 March 2020 Paper

Sub-terahertz detection by fin-shaped GaN/AlGaN transistors

P. Sai, D. But, G. Cywinski, M. Dub, M. Sakowicz, P. Prystawko, S. Rumyantsev, W. Knap

Proceedings Volume 11279, 1127905 (2020) https://doi.org/10.1117/12.2547298

KEYWORDS: Field effect transistors, Plasma, Terahertz radiation, Sensors, Gallium nitride, Terahertz detection

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Proceedings Article | 17 February 2011 Paper

Plasmonic cladding InGaN MQW laser diodes

P. Perlin, K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski, I. Grzegory, T. Suski

Proceedings Volume 7953, 79530I (2011) https://doi.org/10.1117/12.873929

KEYWORDS: Cladding, Semiconductor lasers, Gallium nitride, Plasmonics, Refractive index, Indium gallium nitride, Nitrogen, Waveguides, Plasma, Molecular beam epitaxy

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Proceedings Article | 3 March 2006 Paper

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

C. Skierbiszewski, G. Cywiński, M. Siekacz, A. Feduniewicz-Zmuda, L. Nevou, L. Doyennette, M. Tchernycheva, F. Julien, J. Smalc, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, J. Domagała, T. Remmele, M. Albrecht, S. Porowski

Proceedings Volume 6121, 612109 (2006) https://doi.org/10.1117/12.646014

KEYWORDS: Aluminum, Quantum wells, Gallium nitride, Absorption, Indium, Telecommunications, Polishing, Plasma, Molecular beam epitaxy, Superlattices

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