High power diode lasers are widely used as the pump sources for fiber lasers and solid-state lasers, or the light sources for direct diode laser systems. To meet the emerging needs of fiber lasers, solid state lasers and direct diode laser systems, diode lasers are moving towards higher volume manufacturing, along with higher performance and lower cost. In this paper, we will present our progresses in these areas. We have set up a 6" GaAs wafer production line for high power diode laser chips, which includes MOCVD epitaxy and wafer fabrication. With the 6" wafer production line, we are producing multi-million chips per month for fiber laser pumping. The 6" wafers show great uniformity and reproducibility. Device performance is outstanding, with near 70% efficiency and high CW roll-over power.
The laser induced micro/ nano-meter size surface structures are fabricated by multi linear polarized femtosecond laser pulses (pulse duration τ=35 fs, wavelength λ=800 nm) irradiation at room temperature(25 ℃ ) and 400 ℃. The structures fabricated at these two temperatures show distinct temperature dependence. The grooves, which are parallel to the polarization of the laser light, can be clearly observed at almost all the structured area formed at 400 ℃ while laser induced period structures(ripples) are the most pronounced surface structure in the crater formed at room temperature. The crystallinity of these surface structures are investigated by using Raman spectroscopy. The Raman spectrum shows that all the structured area formed at 400 ℃ is crystalline(or poly-crystalline) while amorphous silicon can be observed within the structures formed at room temperature (25 ℃). These results indicate that temperature is an important parameter to be tuned to tailor the micro/nano-structure fabrication.
Femtosecond laser induced nonthermal processing is an emerging nanofabrication technique for delicate plasmonic
devices. In this work we present a detailed investigation on the interaction between ultra-short pulses and silver
nanomaterials, both experimentally and theoretically. We systematically study the laser-silver interaction at a laser fluent
from 1 J/m2 to 1 MJ/m2. The optimal processing window for welding of silver nanowires occurs at fluences of 200-450
J/m2. The femtosecond laser-induced surface melting allows precise welding of silver nanowires for "T” and “X” shape
circuits. These welded plasmonic circuits are successfully applied for routining light propagation.
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