Future remote imaging systems promise spectroscopic functionalities extending well beyond the visible wavelengths. This allows real-time spectral information to be gathered from multiple wavelength bands which is highly attractive for numerous remote sensing spectroscopy/imaging applications and aids target recognition. This paper briefly presents a micro-electromechanical systems (MEMS) based electrically tuneable adaptive filter technology developed for the technologically important infrared (IR) bands of the electromagnetic spectrum and reports on the progress towards extension to the significantly longer wavelength THz band. The demonstrated concepts focus on merging MEMSenabled dynamic modulation with the spectral sensitivity and selectivity of metamaterials, as well as on the possibility of adopting the rapidly evolving 3D printing technologies.
High performance infrared (IR) sensing and imaging systems require IR optoelectronic detectors that have a high signal-to-noise ratio (SNR) and a fast response time, and that can be readily hybridised to CMOS read-out integrated circuits (ROICs). From a device point of view, this translates to p-n junction photovoltaic detectors based on narrow bandgap semiconductors with a high quantum efficiency (signal) and low dark current (noise). These requirements limit the choice of possible semiconductors to those having an appropriate bandgap that matches the wavelength band of interest combined with a high optical absorption coefficient and a long minority carrier diffusion length, which corresponds to a large mobility-lifetime product for photogenerated minority carriers. Technological constraints and modern clean-room fabrication processes necessitate that IR detector technologies are generally based on thin-film narrow bandgap semiconductors that have been epitaxially grown on lattice-matched wider bandgap IR-transparent substrates. The basic semiconductor material properties have led to InGaAs (in the SWIR up to 1.7 microns), InSb (in the MWIR up to 5 microns), and HgCdTe (in the eSWIR, MWIR and LWIR wavelength bands) being the dominant IR detector technologies for high performance applications. In this paper, the current technological limitations of HgCdTe-based technologies will be discussed with a view towards developing future pathways for the development of next-generation IR imaging arrays having the features of larger imaging array format and smaller pixel pitch, higher pixel yield and operability, higher quantum efficiency (QE), higher operating temperature (HOT), and dramatically lower per-unit cost.
The anticipated feature of future generation remote infrared (IR) sensing and imaging technologies includes adding so called multi-colour capabilities. Such enhancement of the current state-of-the-art IR detector and imaging focal plane array (FPA) technologies allows real-time spectral information to be gathered from multiple wavelength bands. Multi/hyper-spectral imaging results in improved target recognition and is applicable to numerous remote sensing spectroscopy/imaging applications. In order to provide a reduced size, weight and power (SWaP) solution, a micro electromechanical systems (MEMS) based electrically tuneable adaptive filter technology has been developed for important IR bands of the electromagnetic spectrum. The adopted approach is capable of delivering on-chip remote hyper/multi-spectral sensing by obtaining narrow-band spectral sensitivity utilising a tuneable MEMS optical filter fabricated directly on a detector. This paper summarizes the performance demonstrated within the most technologically relevant bands of short-wave IR (SWIR, 1.4-2.5 µm), mid-wave IR (MWIR, 3-5 µm), and long-wave IR (LWIR, 8-12 µm). In SWIR, the demonstrated nanometer-scale uniformity in the flatness of suspended MEMS allows for spatial uniformity of the filtered peak centre wavelength and the achieved 30-35 nm spectral width to remain within single nanometers over 500µm x 500µm optical apertures. In LWIR, the spatial peak wavelength selectivity variation is achieved to be less than 1.2% across 200μm × 200μm optical imaging areas, exceeding the requirements for passive multispectral thermal imaging and validating the suitability for mechanically robust multi/hyper-spectral remote sensing and imaging applications deployable on low-SWaP field-portable platforms.
High performance tunable absorbers for terahertz (THz) frequencies will be crucial in advancing applications such as single-pixel imaging and spectroscopy. Metamaterials provide many new possibilities for manipulating electromagnetic waves at the subwavelength scale. Due to the limited response of natural materials to terahertz radiation, metamaterials in this frequency band are of particular interest.
The realization of a high-performance tunable (THz) absorber based on microelectromechanical system (MEMS) is challenging, primarily due to the severe mismatch between the actuation range of most MEMS (on the order of 1-10 microns) and THz wavelengths on the order of 100-1000 microns. Based on a metamaterial design that has an electromagnetic response that is extremely position sensitive, we combine meta-atoms with suspended at membranes that can be driven electrostatically. This is demonstrated by using near-field coupling of the meta-atoms to create a substantial change in the resonant frequency.
The devices created in this manner are among the best-performing tunable THz absorbers demonstrated to date, with an ultrathin device thickness ( 1/50 of the working wavelength), absorption varying between 60% and 80% in the initial state when the membranes remain suspended, and with a fast switching speed ( 27 us). In the snap-down state, the resonance shifts by γ >200% of the linewidth (14% of the initial resonance frequency), and the absorption modulation measured at the initial resonance can reach 65%.
Electronic transport parameters in a nominally P+/π/P+ InAs/GaSb type-II superlattice vertical photoconductor
structure for long-wavelength infrared detectors have been characterized employing magnetic field dependent
resistivity and Hall-effect measurements, and high-resolution mobility spectrum analysis. Carrier transport parameters
from both the P+ and nominally π regions were obtained over the 80 to 300K temperature range. At
300 K, the minority carrier electrons in the nominally π region was found to be characterized by a mobility and
concentration of 11,000 cm2/Vs and 1.1×1017 cm-3, respectively. Taking into account our previously reported
room-temperature vertical electron transport parameters,1 the vertical to lateral mobility and carrier concentration
ratios have been determined to be 0.19 and 5.5×10-4 , respectively. A miniband energy gap of 192±8 meV
was estimated from the thermal activation of the minority carrier electrons in the lightly doped InAs/GaSb
superlattice region.
In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II
superlattices for long-wavelength infrared detectors. Variable magnetic eld geometrical magnetoresistance mea-
surements have been employed to extract the vertical transport parameters, since the Hall-eect technique cannot
be employed in the vertical transport conguration. The room-temperature magnetoresistance measurements
were performed employing a kelvin-mode set up, at electric elds not exceeding 25 V/cm and at magnetic eld
intensities up to 12 T. The measured magnetoresistance, shown to exhibit multiple-carrier conduction charac-
teristics, were analyzed using a high-resolution mobility spectrum analysis technique. It is shown that, at room
temperature, the electrical conductivity of the sample is due to four distinct carriers, associated with the major-
ity carrier holes, sidewall inversion layer electrons, and two minority carrier electrons likely associated with two
distinct conduction band levels.
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