Recent development trends in InP-based optoelectronic devices are illustrated by means of selected examples. These include lasers for uncooled operation and direct modulation at 10 Gbit/s, complex-coupled lasers, which exhibit particularly low sensitivity to back reflections as well as monolithic mode-locked semiconductor lasers as ps-pulse sources for OTDM applications. Furthermore, a Mach-Zehnder interferometer modulator for high bit rate applications (40 Gbit/s and beyond) is described, and finally, photoreceivers and ultra high-speed waveguide-integrated photodiodes with > 100 GHz bandwidth are presented, which are key component for high bit rate systems, advanced modulation format transmission links, and for high speed measurement equipment as well.
Buried Ridge Structure GaInAsP/InP lasers with stripes parallel to and directions are fabricated by metal-orgnic vapour phase epitaxy regrowth and effective carrier lifetimes Teff of these devices are determined from the variation of the turn-on delay of the emitted radiation when short current pulses are applied to the lasers for different bias currents. We obtained Teff 2 ns for stripes parallel to the direction and eff lfl the range from 0. 5 ns to 0. 7 ns for stripes parallel to the direction. Our results demonstrate that the earlier observed large threshold currents of lasers with stripes parallel to the direction are essentially due to reduced carrier lifetimes and to a minor extent due to additional leakage currents. The reduced effective carrier lifetimes are attributed to Zn which has diffused from the GaInAs-contact layer into the active layer in accordance with recent secondary ion mass spectroscopic investigations. The reduced carrier lifetime leads to an increase of the 3 dB cut-off frequency of directly modulated lasers beyond 6 GHz. SPIE Vol 1361 Physical Concepts of Materials for Novel Optoelectronic Device Applications 1(1990) / 917
Conference Committee Involvement (3)
Silicon Photonics and Photonic Integrated Circuits
7 April 2008 | Strasbourg, France
Semiconductor Lasers and Laser Dynamics II
3 April 2006 | Strasbourg, France
Semiconductor Optoelectronic Devices for Lightwave Communication
8 September 2003 | Orlando, Florida, United States
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