We propose an optical fiber scanner suitable for high-power industrial laser marking systems. The proposed optical scanner enables beam scanning by resonating the optical fiber end with an electric actuator. As our optical scanner is extremely compact and lightweight, high-speed operation can be expected compared with the conventional galvanometer-type optical scanner. In this paper, novel monitoring and compensation techniques of the beam scanning path utilizing a position-sensitive detector in order to compensate for the manufacturing errors of optical fiber scanners are discussed. We demonstrate that the beam can be scanned linearly at a resonance frequency of about 10 kHz by appropriately controlling the amplitude and phase difference of the applied voltage.
KEYWORDS: Connectors, Optical interconnects, Optical fibers, Communication and information technologies, Waveguides, Fiber coatings, Structured optical fibers, Field programmable gate arrays, Embedded systems
The bandwidth of information and communication technology (ICT) systems is increasing and is predicted to reach more than 10 Tb/s. However, an electrical interconnect cannot achieve such bandwidth because of its density limits. To solve this problem, we propose two types of high-density optical fiber wiring for backplanes and circuit boards such as interface boards and switch boards. One type uses routed ribbon fiber in a circuit board because it has the ability to be formed into complex shapes to avoid interfering with the LSI and electrical components on the board. The backplane is required to exhibit high density and flexibility, so the second type uses loose fiber. We developed a 9.6-Tb/s optical interconnect demonstration system using embedded optical modules, optical backplane, and optical connector in a network apparatus chassis. We achieved 25-Gb/s transmission between FPGAs via the optical backplane.
A failure recovery system utilizing a multi-core fiber (MCF) link with field programmable gate array-based optical switch units was developed to achieve high capacity and highly reliable optical networks in access areas. We describe the novel MCF link based on a multi-ring structure and a protection scheme to prevent link failures. Fan-in/ -out devices and connectors are also presented to demonstrate the development status of the MCF connection technology for the link. We demonstrated path recovery by switching operation within a sufficiently short time, which is required by ITU-T. The selection of a protecting path as a failure working path was also optimized as the minimum passage of units for low loss transmission. The results we obtained indicate that our proposed link has potential for the network design of highly reliable network topologies in access areas such as data centers, systems in business areas, and fiber to the home systems in residential areas.
For a multi mode fiber optical link, a high speed silicon photonics receiver based on a highly alignment tolerant
vertically illuminated germanium photodiode was developed. The germanium photodiode has 20 GHz bandwidth and
responsivity of 0.5 A/W with highly alignment tolerance for passive optical assembly. The receiver achieves 25 Gbps
error free operation after 100 m multi mode fiber transmission.
Conduction-band effective masses in a direction parallel to the quantum well plane were investigated in n-type- modulation-doped InGaAs/InAlAs multi-quantum well system. Thicknesses of well and barrier were 5 and 10 nm. Three highly-doped specimens having about 1 X 1012 cm-2 per one quantum well were prepared by MBE. Double-crystal x-ray diffraction was used to check the crystal quality. Heavy electron effective masses, almost 50 percent bigger than the band edger mass of 0.041m0, were measured by far-IR and IR cyclotron resonances under pulse high magnetic fields up to 100 T. Nonparabolicity of this subband was less than 12 percent by comparing the two cyclotron resonances. Observed 2D subband structure was quite different from conduction band in a direction perpendicular to the same quantum well and from that of GaAs/GaAlAs quantum well system.
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