Prof. Hideto Miyake Profile

Prof. Hideto Miyake

Professor at Mie Univ

SPIE Involvement:

Conference Program Committee | Author

Publications (18)

Proceedings Article | 9 March 2024 Presentation

Progress in UV-B laser diodes on lattice-relaxed high-quality AlGaN fabricated on sapphire substrates

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12886, PC1288606 (2024) https://doi.org/10.1117/12.3005198

KEYWORDS: Semiconductor lasers, Sapphire, Aluminum gallium nitride, Laser damage threshold, Waveguides, Refractive index, Pulsed laser operation, Laser applications, Design and modelling

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Proceedings Article | 9 March 2024 Presentation

Fabrication of deep UV LEDs with a high-quality AlGaN on face-to-face annealed sputter-deposited AlN template

Hideto Miyake, Kenjiro Uesugi, Takao Nakamura

Proceedings Volume PC12886, PC128860G (2024) https://doi.org/10.1117/12.3005277

KEYWORDS: Light emitting diodes, Quantum annealing, Aluminum gallium nitride, Fabrication, External quantum efficiency, Deep ultraviolet, Sapphire, Emission wavelengths, Crystals

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Proceedings Article | 8 March 2024 Presentation + Paper

Longitudinal optical (LO) and LO-like phonon resonant mid-infrared radiation emission and absorption by surface micro-structures on III-nitrides

Yoshihiro Ishitani, Bojin Lin, Hnin Lai Lai Aye, Daiki Yoshikawa, Hideto Miyake, Kohei Ueno, Hiroshi Fujioka

Proceedings Volume 12886, 1288605 (2024) https://doi.org/10.1117/12.3000696

KEYWORDS: Phonons, Gallium nitride, Interfaces, Dielectrics, Semiconducting wafers, Mid infrared, Polarization

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Proceedings Article | 8 March 2024 Presentation + Paper

Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD

J. Yoshinaga, K. Ikejiri, S. Koseki, K. Uesugi, H. Miyake

Proceedings Volume 12886, 128860B (2024) https://doi.org/10.1117/12.2692614

KEYWORDS: Light emitting diodes, Metalorganic chemical vapor deposition, Annealing, Aluminum gallium nitride

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Proceedings Article | 5 October 2023 Presentation

UV-B laser diodes fabricated on lattice relaxed high quality AlGaN templates

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12652, PC1265208 (2023) https://doi.org/10.1117/12.2677284

KEYWORDS: Semiconductor lasers, Aluminum gallium nitride, Ultraviolet radiation, Solid state lasers, Power consumption, Optical resonators, Noble gases, Gas lasers, Doping, Crystals

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Proceedings Article | 21 March 2023 Presentation

Fabrication of 265 nm LED on face-to-face annealed sputter-deposited AlN/sapphire

Hideto Miyake

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2651747

KEYWORDS: Aluminum nitride, Light emitting diodes, External quantum efficiency, Annealing, Sputter deposition, Sapphire, Crystals

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Proceedings Article | 21 March 2023 Presentation

Progress in UV-B laser diodes fabricated on lattice relaxed AlGaN

Motoaki Iwaya, Ryosuke Kondo, Ryota Hasegawa, Ayumu Yabutani, Eri Matsubara, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2646560

KEYWORDS: Semiconductor lasers, Quantum efficiency, External quantum efficiency, Pulsed laser operation, Polarization, Optical resonators, Mirrors, Medical devices, Laser development, Laser damage threshold

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Proceedings Article | 17 March 2023 Presentation

Fabrication of vertical UV light-emitting devices by separation of sapphire substrates (Conference Presentation)

Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, Akihiro Yamaguchi

Proceedings Volume PC12441, PC124410A (2023) https://doi.org/10.1117/12.2646756

KEYWORDS: Ultraviolet radiation, Sapphire, Light emitting diodes, Semiconductor lasers, Ultraviolet light emitting diodes, Semiconductors, Semiconducting wafers, Luminescence, High power lasers, Deep ultraviolet

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Proceedings Article | 17 March 2023 Presentation

Development of AlGaN-based laser diodes in the UV-A to UV-B regions

Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake

Proceedings Volume PC12440, PC1244005 (2023) https://doi.org/10.1117/12.2647243

KEYWORDS: Semiconductor lasers, Laser development, Ultraviolet radiation, Ultraviolet light emitting diodes, Patents, Optical resonators, Medicine, Laser crystals, Laser applications, Doping

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Proceedings Article | 5 March 2021 Presentation

Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photo-excitation density and temperatures

P. Ščajev, S. Miasojedovas, B. Gil, H. Miyake

Proceedings Volume 11686, 116861Q (2021) https://doi.org/10.1117/12.2576096

KEYWORDS: Excitons, Luminescence, Heterojunctions, Diffusion, Aluminum, Temperature metrology, Silicon, Plasma, Numerical modeling

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Proceedings Article | 5 March 2021 Presentation

Fabrication of high crystalline AlN/sapphire for deep UV-LED

Hideto Miyake, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya

Proceedings Volume 11686, 116860Z (2021) https://doi.org/10.1117/12.2585271

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Proceedings Article | 5 March 2021 Presentation

Improvement of device performance in UV-B laser diodes

Motoaki Iwaya, Shunya Tanaka, Moe Shimokawa, Yuya Ogino, Tomoya Omori, Kazuki Yamada, Sayaka Ishizuka, Shohei Teramura, Kosuke Sato, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hideto Miyake

Proceedings Volume 11686, 116860Q (2021) https://doi.org/10.1117/12.2575973

KEYWORDS: Semiconductor lasers, Ultraviolet radiation, Applied physics, Polarization, Doping, Continuous wave operation

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Proceedings Article | 5 March 2021 Presentation + Paper

Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis

Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake, D. Iida, K. Ohkawa

Proceedings Volume 11686, 116861Y (2021) https://doi.org/10.1117/12.2576776

KEYWORDS: Phonons, Excitons, Raman spectroscopy, Ultraviolet radiation, Thin films, Process control, Plasmons, Laser irradiation, Laser development

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Proceedings Article | 5 March 2021 Presentation

Development of DUV-LED grown on high-temperature annealed AlN template

Kenjiro Uesugi, Ding Wang, Kanako Shojiki, Shigeyuki Kuboya, Hideto Miyake

Proceedings Volume 11686, 116860U (2021) https://doi.org/10.1117/12.2576492

KEYWORDS: Aluminum nitride, Crystals, Vapor phase epitaxy, Sapphire, Reliability, Quantum wells, Quantum efficiency, Light emitting diodes, External quantum efficiency, Deep ultraviolet

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Proceedings Article | 14 March 2018 Presentation

High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation)

Hideto Miyake, Yusuke Hayashi, Shi-yu Xiao, Kazumasa Hiramatsu

Proceedings Volume 10532, 1053202 (2018) https://doi.org/10.1117/12.2292561

KEYWORDS: Annealing, Aluminum nitride, Sapphire, Crystals, Nanostructures, Deep ultraviolet, Thermal effects, Nitrogen, Scanning transmission electron microscopy, Interfaces

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Proceedings Article | 23 February 2018 Paper

Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere

Akira Mishima, Yuji Tomita, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Hideto Miyake

Proceedings Volume 10532, 1053204 (2018) https://doi.org/10.1117/12.2292182

KEYWORDS: Aluminum nitride, Annealing, Sapphire, Semiconducting wafers, Nitrogen, Scanning electron microscopy, Atomic force microscopy, Crystals, Carbon, Reflection

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Proceedings Article | 22 December 2015 Paper

Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application

Atsushi Motogaito, Masanori Kito, Hideto Miyake, Kazumasa Hiramatsu

Proceedings Volume 9668, 96681Q (2015) https://doi.org/10.1117/12.2201116

KEYWORDS: Metals, Visible radiation, Optical filters, Reflectivity, Reflection, Surface plasmons, Dielectric filters, Dielectric polarization, Infrared radiation, Dielectrics, Gold, Thin films, Transmittance, Magnetism

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Proceedings Article | 17 February 2009 Paper

Fabrication of position-controlled InN nanocolumns by ECR-MBE

T. Araki, D. Fukuoka, H. Tamiya, S. Harui, H. Miyake, K. Hiramatsu, Y. Nanishi

Proceedings Volume 7216, 72160N (2009) https://doi.org/10.1117/12.811764

KEYWORDS: Indium nitride, Gallium nitride, Scanning electron microscopy, Ion beams, Nanolithography, Transmission electron microscopy, Chemical species, Molecular beam epitaxy, Luminescence, Ions

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Showing 5 of 18 publications

Conference Committee Involvement (17)

Gallium Nitride Materials and Devices XX

27 January 2025 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Gallium Nitride Materials and Devices XV

4 February 2020 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIV

4 February 2019 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

Gallium Nitride Materials and Devices XI

15 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

Gallium Nitride Materials and Devices IX

3 February 2014 | San Francisco, California, United States

Gallium Nitride Materials and Devices VIII

4 February 2013 | San Francisco, California, United States

Gallium Nitride Materials and Devices VII

23 January 2012 | San Francisco, California, United States

Gallium Nitride Materials and Devices VI

24 January 2011 | San Francisco, California, United States

Gallium Nitride Materials and Devices V

25 January 2010 | San Francisco, California, United States

Gallium Nitride Materials and Devices IV

26 January 2009 | San Jose, California, United States

Showing 5 of 17 Conference Committees

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