Gigaphoton Inc. presents a Sn-LPP EUV light source for mask inspection tools. This light source uses a minimum-mass Sn droplet generator with an in-line Sn fuel supply system, a double-pulse laser irradiation scheme with precise shooting control and a debris mitigation technology with H2 buffer-gas flow. During 1500 hours of continuous operation, a brightness of 120W/mm2sr at the plasma point, a stable EUV energy 3σ-value below 5% and a high availability of 99% have been obtained without reflectivity degradation of the EUV collector mirror. We are currently developing key components for higher repetition rate to further increase the brightness.
Gigaphoton Inc. presents a Sn-LPP EUV light source for mask inspection tools. This light source uses a minimum-mass Sn droplet generator with an in-line Sn fuel supply system, a double-pulse laser irradiation scheme with precise shooting control and a debris mitigation technology with H2 buffer-gas flow. During 1500 hours of continuous operation, a brightness of 120W/mm2 sr at the plasma point, a stable EUV energy 3σ-value below 5% and a high availability of 99% have been obtained without reflectivity degradation of the EUV collector mirror. We are currently developing key components for higher repetition rate to further increase the brightness.
Gigaphoton Inc. presents a Sn-LPP EUV light source for mask inspection tools. It is based on a minimum-mass Sn droplet generator with an in-line Sn fuel supply system, a double-pulse laser irradiation scheme with precise shooting control and a debris mitigation technology with H2 buffer-gas flow. A brightness of 120W/mm2 sr at the plasma point without reflectivity degradation of the EUV collector mirror after 500 hours continuous operation has been demonstrated with a very low EUV energy 3σ-value of 5%.
We report the development progress of key technologies for the Sn-LPP (Laser-produced-plasma) EUV light source system at Gigaphoton Inc. EUV light source systems have come to be used for a wide range of applications such as lithography exposure tools and inspection tools. In both applications, high power and high radiance together with high operation availability are required. To meet these requirements, we developed and optimized a long lifetime droplet generator, a pre-pulse irradiation scheme, laser-droplet shooting control and debris mitigation with hydrogen gas for lifetime extension of the EUV collector mirror. To achieve high operation availability, the collector mirror and the Sn droplet generator lifetime are the most important contributions. The collector mirror lifetime is mainly determined by the reflectivity degradation due to sputtering, implantation, and deposition by Sn ions, Sn atoms, Sn fragments, and hydrogen-induced blisters. The developed droplet generator with in-line Sn fuel feed system has demonstrated stable droplet generation for more than 1,300 hours in our EUV light source. An advanced pre-pulse technology achieved higher CE without increasing the energy of the Sn plasma. Our Sn mitigation scheme works efficiently for lower energy ions and lower fragment deposition rates. Our optimized in-situ shooting control system improved the EUV energy and dose error. With these technologies, we have demonstrated no reflectivity degradation (i.e. no fragment deposition) on EUV sample mirrors after 25 Billion pulse irradiation tests. The advanced capping layer has demonstrated to suppress blister formation.
We report the status of the CO2-Sn-LPP (Laser-produced-plasma) EUV light source development at Gigaphoton. It is the high power 13.5nm light source solution for the manufacturing of semiconductor pattern below 7nm. Our original technologies are a combination of a pulsed CO2 laser with Sn droplets, dual wavelength laser application and Sn debris mitigation with a magnetic field. Providing high EUV power with high operation availability is a requirement for the EUV light source system. With above technologies, we have demonstrated a collector mirror reflectivity degradation rate of less than -0.5%/Bp at an average power of 125W at IF during a week of operation. We also achieved an in-band power of 270W under dose-controlled operation and demonstrated a power scalability up to 365W. To achieve higher availability, we improved the two main factors that limit the operation availability, that are the lifetime of the droplet generator and of the collector mirror. We are developing a new long-lifetime droplet generator with an in-situ Sn fuel supply system. With this technology, we have demonstrated stable droplet generation continuously for more than 2000 hours. The mirror lifetime is determined by the reflectivity degradation of the multilayer coating, due to hydrogen blistering, oxidation, as well as sputtering, implantation, and deposition by Sn ions, Sn atoms, and Sn fragments. Since our magnetic mitigation scheme works effectively for lower energy ions, we developed advanced pre-pulse laser irradiation to suppress the generation of high-energy ions from the Sn plasma without loss of the high EUV Conversion Efficiency of ~6%. An in-situ shooting control system, which was developed for newly optimized laser conditions, remarkably improved the EUV energy and dose error 3σ by 50%. With this new shooting control technology, we demonstrated fragment-free EUV sample mirrors after a medium-term test at the EUV research source.
We report the status of the CO2-Sn-LPP (Laser-produced-plasma) EUV light source development at Gigaphoton. It is the high power 13.5nm light source solution for the manufacturing of semiconductor pattern below 7nm. Our unique and original technologies are; a combination of a pulsed CO2 laser with Sn droplets, dual wavelength laser application and Sn debris mitigation with a magnetic field. Providing high EUV power with high operation availability is a requirement for the EUV light source system. With above technologies, we have demonstrated a collector mirror reflectivity degradation rate of less than -0.5%/Bp at an average power of 125W at IF during a week of operation. We also achieved an inband power of 270W under dose-controlled operation and demonstrated a power scalability up to 365W. To achieve higher availability, we improved the two main factors that limit the operation availability, that are the lifetime of the collector mirror and of the droplet generator. The mirror lifetime is determined by the reflectivity degradation of the multilayer coating, due to hydrogen blistering, oxidation, as well as sputtering, implantation, and deposition by Sn ions, Sn atoms, and Sn fragments. Since our magnetic mitigation scheme works effectively for lower energy ions, we developed advanced pre-pulse laser irradiation to suppress the generation of high-energy ions from the Sn plasma without loss of the high EUV Conversion Efficiency of ~6%. We are also developing a new long-lifetime droplet generator with an inline Tin feed feature, that extends the lifetime of our droplet generators.
We report the status of CO2-Sn-LPP (Laser-produced-plasma) EUV light source that is being developed at Gigaphoton. Our unique and original technologies are; the combination of a pulsed CO2 laser with Sn droplets, dual wavelength laser application and Sn mitigation with a magnetic field. With these technologies, we achieved >250W (clean burst power at I/F) during more than 10 Billion pulses of operation.
At the conference, we will present the development progress of system key components of our EUV light source and the evaluation results of the rate of decrease in reflectivity of actual collector mirrors at >250W.
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration, a high-speed Sn-droplet generator, a high-speed and high accuracy shooting system, and a magnetic field debris mitigation system. To achieve an in-band power of 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components; especially, the laser beam quality at 27 kW CO2 laser output power by upgrading the CO2 laser beam transfer system, the dose stability and suppression of small Tin (Sn) debris, upgrading a shooting control system, improvement of the collector mirror degradation rate by the optimization of H2 flow condition, and changing the EUV chamber structure. We achieved an in-band power of 250W under DC operation and demonstrated a power scalability up to 365W. This paper presents the key technology update of our EUV light source.
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration and a magnetic field debris mitigation system. To achieve 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components; especially, the laser beam quality at 26 kW CO2 laser output power by upgrading the CO2 laser beam transfer system, the conversion efficiency (CE) by the optimization of plasma-related parameters to now 6 %, the dose stability and suppression of small Tin (Sn) debris by upgrading the shooting control system, the collector mirror degradation rate by the optimization of H2 flow condition and changes in the EUV chamber structure. This paper presents the key technology update of our EUV light source.
Gigaphoton Inc. is developing a laser produced plasma (LPP) extreme ultra violet (EUV) light source for high-volumemanufacturing (HVM) semiconductor lithography. Original technologies and key components of this source include a high-power carbon dioxide (CO2) laser with 15ns pulse duration, a short wavelength solid-state pre-pulse laser with 10ps pulse duration, a highly stabilized small droplet (DL) target, a precise laser-DL shooting control system and debris mitigation technology with a magnetic field. In this paper, an update of the development progress of the total system and of the key components is presented.
Gigaphoton Inc. is developing a laser produced plasma (LPP) extreme ultra violet (EUV) light source for high-volumemanufacturing (HVM) semiconductor lithography. Original technologies and key components of this source include a high-power carbon dioxide (CO2) laser with 15ns pulse duration, a short wavelength solid-state pre-pulse laser with 10ps pulse duration, a highly stabilized small droplet (DL) target, a precise laser-DL shooting control system and debris mitigation technology with a magnetic field. In this paper, an update of the development progress of the total system and of the key components is presented.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.