Mr. Hiroyuki Shigemura Profile

Hiroyuki Shigemura

at Semiconductor Leading Edge Technologies Inc

SPIE Involvement:

Author

Publications (27)

SPIE Journal Paper | 1 October 2011

Evaluation of extreme ultraviolet mask defect using blank inspection, patterned mask inspection, and wafer inspection

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

JM3, Vol. 10, Issue 04, 043006, (October 2011) https://doi.org/10.1117/12.10.1117/1.3644984

KEYWORDS: Photomasks, Inspection, Defect detection, Extreme ultraviolet, Wafer inspection, Semiconducting wafers, Defect inspection, Extreme ultraviolet lithography, Printing, Multilayers

Read Abstract +

Proceedings Article | 20 April 2011 Paper

Paper

EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond

Mari Nozoe, Toshihiko Tanaka, Takashi Kamo, Shinji Kubo, Tomohiro Tamori, Noriaki Takagi, Takeshi Yamane, Tsuneo Terasawa, Hiroyuki Shigemura, Osamu Suga

Proceedings Volume 7971, 797123 (2011) https://doi.org/10.1117/12.879346

KEYWORDS: Inspection, Photomasks, Semiconducting wafers, Defect detection, Extreme ultraviolet, Wafer inspection, Defect inspection, Line width roughness, Image processing, Signal to noise ratio

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Proceedings Article | 7 April 2011 Paper

Paper

Development of new FIB technology for EUVL mask repair

Fumio Aramaki, Takashi Ogawa, Osamu Matsuda, Tomokazu Kozakai, Yasuhiko Sugiyama, Hiroshi Oba, Anto Yasaka, Tsuyoshi Amano, Hiroyuki Shigemura, Osamu Suga

Proceedings Volume 7969, 79691C (2011) https://doi.org/10.1117/12.879609

KEYWORDS: Extreme ultraviolet lithography, Ions, Etching, Extreme ultraviolet, Silicon, Image resolution, Reflectivity, Ion beams, Mirrors, Ruthenium

Read Abstract +

Proceedings Article | 29 March 2011 Paper

Paper

Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

Proceedings Volume 7969, 79690J (2011) https://doi.org/10.1117/12.879551

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Defect detection, Extreme ultraviolet, Printing, Scanning electron microscopy, Multilayers, Extreme ultraviolet lithography

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Proceedings Article | 29 September 2010 Paper

Paper

Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Toshihiko Tanaka, Kazuo Tawarayama, Osamu Suga, Ichiro Mori

Proceedings Volume 7823, 78231U (2010) https://doi.org/10.1117/12.864305

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Particles, Extreme ultraviolet, Scanning electron microscopy, Lithography, Printing

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Proceedings Article | 29 September 2010 Paper

Paper

Study of EUV mask inspection technique using DUV light source for hp22nm and beyond

Ryoichi Hirano, Nobutaka Kikuiri, Hideaki Hashimoto, Kenichi Takahara, Masatoshi Hirono, Hiroyuki Shigemura

Proceedings Volume 7823, 782339 (2010) https://doi.org/10.1117/12.866673

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Defect detection, Extreme ultraviolet lithography, Image contrast enhancement, Image enhancement, Lithographic illumination, Image sensors, Light sources

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Proceedings Article | 25 September 2010 Paper

Paper

Study of EUV mask defect repair using FIB method

Tsuyoshi Amano, Noriaki Takagi, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Kensuke Shiina, Fumio Aramaki, Anto Yasaka, Yuichi Inazuki, Naoya Hayashi

Proceedings Volume 7823, 782323 (2010) https://doi.org/10.1117/12.864213

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Cadmium sulfide, Image processing, Scanning electron microscopy, Transmission electron microscopy, Semiconducting wafers, Carbon, Ions

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Proceedings Article | 27 May 2010 Paper

Paper

FIB-CVD technology for EUV mask repair

Tsuyoshi Amano, Noriaki Takagi, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Kensuke Shiina, Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka

Proceedings Volume 7748, 77481I (2010) https://doi.org/10.1117/12.867233

KEYWORDS: Chemical vapor deposition, Photomasks, Tungsten, Extreme ultraviolet, Carbon, Silicon, Gallium, Extreme ultraviolet lithography, Chemical analysis, Vacuum ultraviolet

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Proceedings Article | 2 April 2010 Paper

Paper

A novel defect detection optical system using 199-nm light source for EUVL mask

Ryoichi Hirano, Nobutaka Kikuiri, Masatoshi Hirono, Riki Ogawa, Hiroyuki Sigemura, Kenichi Takahara, Hideaki Hashimoto

Proceedings Volume 7638, 76382Z (2010) https://doi.org/10.1117/12.848679

KEYWORDS: Photomasks, Inspection, Defect detection, Image contrast enhancement, Signal detection, Extreme ultraviolet lithography, Extreme ultraviolet, Image enhancement, Lithography, Image sensors

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Proceedings Article | 23 March 2010 Paper

Paper

Improvement of EUV mask defect printability evaluation

Noriaki Takagi, Hiroyuki Shigemura, Tsuyoshi Amano, Takashi Kamo, Osamu Suga

Proceedings Volume 7636, 763621 (2010) https://doi.org/10.1117/12.846333

KEYWORDS: Opacity, Photomasks, Semiconducting wafers, Scanning electron microscopy, Inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Printing, Computer simulations, Image analysis

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Proceedings Article | 30 September 2009 Paper

Paper

Novel EUV mask inspection tool with 199-nm laser source and high-resolution optics

Nobutaka Kikuiri, Masatoshi Hirono, Ryoichi Hirano, Tsuyoshi Amano, Osamu Suga, Hiroyuki Shigemura, Hideaki Hashimoto, Kenichi Takahara, Kinya Usuda

Proceedings Volume 7488, 74882O (2009) https://doi.org/10.1117/12.829747

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, EUV optics, Image contrast enhancement, Laser sources, Optical inspection, Defect detection, Super resolution, Optical alignment

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Proceedings Article | 30 September 2009 Paper

Paper

Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method

Hiroyuki Shigemura, Tsuyoshi Amano, Yukiyasu Arisawa, Osamu Suga, Hideaki Hashimoto, Masanori Saito, Masaya Takeda, Nobutaka Kikuiri, Ryoichi Hirano

Proceedings Volume 7488, 74882I (2009) https://doi.org/10.1117/12.829748

KEYWORDS: Photomasks, Inspection, Opacity, Defect inspection, Defect detection, Extreme ultraviolet lithography, Semiconducting wafers, Reflectivity, Signal analysis, Scanning electron microscopy

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Proceedings Article | 11 May 2009 Paper

Paper

Evaluation of EUVL mask pattern defect inspection using 199nm inspection tool with super-resolution method

Hiroyuki Shigemura, Tsuyoshi Amano, Yasushi Nishiyama, Osamu Suga, Yukiyasu Arisawa, Hideaki Hashimoto, Kenichi Takahara, Kinya Usuda, Nobutaka Kikuiri, Ryoichi Hirano

Proceedings Volume 7379, 73792K (2009) https://doi.org/10.1117/12.824334

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Defect inspection, Reflectivity, Optical inspection, Defect detection, Signal detection, Opacity, Finite-difference time-domain method

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Proceedings Article | 11 May 2009 Paper

Paper

FIB mask repair technology for EUV mask

Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Kensuke Shiina, Fumio Aramaki, Anto Yasaka, Tsukasa Abe, Hiroshi Mohri

Proceedings Volume 7379, 73792L (2009) https://doi.org/10.1117/12.824335

KEYWORDS: Photomasks, Carbon, Etching, Extreme ultraviolet, Hydrogen, Chemical vapor deposition, Contamination, Cadmium sulfide, Extreme ultraviolet lithography, Scanning electron microscopy

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Proceedings Article | 24 March 2009 Paper

Paper

Study of advanced mask inspection optics with super-resolution method for next-generation mask fabrication

Ryoichi Hirano, Masatoshi Hirono, Riki Ogawa, Nobutaka Kikuiri, Kenichi Takahara, Hideaki Hashimoto, Hiroyuki Shigemura

Proceedings Volume 7272, 72722A (2009) https://doi.org/10.1117/12.814466

KEYWORDS: Photomasks, Inspection, Super resolution, Lithography, Image transmission, Polarization, Optical inspection, 193nm lithography, Defect detection, Image contrast enhancement

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Proceedings Article | 17 October 2008 Paper

Paper

Ga implantation and interlayer mixing during FIB repair of EUV mask defects

Yasushi Nishiyama, Tsuyoshi Amano, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Tomokazu Kozakai, Fumio Aramaki, Kensuke Shiina, Anto Yasaka, Ryoji Hagiwara

Proceedings Volume 7122, 71222J (2008) https://doi.org/10.1117/12.801428

KEYWORDS: Gallium, Reflectivity, Etching, Chromium, Silicon, Extreme ultraviolet, Chemical species, Ions, Absorption, Molybdenum

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Proceedings Article | 17 October 2008 Paper

Paper

Study of EUVL mask defect repair using FIB-GAE method

Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Kensuke Shiina, Fumio Aramaki, Ryoji Hagiwara, Anto Yasaka

Proceedings Volume 7122, 71222H (2008) https://doi.org/10.1117/12.801214

KEYWORDS: Etching, Photomasks, Extreme ultraviolet lithography, Bridges, Scanning electron microscopy, Image processing, Extreme ultraviolet, Semiconducting wafers, Chromium, Reflectivity

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Proceedings Article | 17 October 2008 Paper

Paper

The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

Hiroyuki Shigemura, Tsuyoshi Amano, Yasushi Nishiyama, Osamu Suga, Tsuneo Terasawa, Yukiyasu Arisawa, Hideaki Hashimoto, Norio Kameya, Masaya Takeda, Nobutaka Kikuiri, Ryoichi Hirano, Masatoshi Hirono

Proceedings Volume 7122, 71222F (2008) https://doi.org/10.1117/12.801550

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Reflectivity, Defect inspection, Opacity, Scanning electron microscopy, Defect detection, Optical inspection, Finite-difference time-domain method

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Proceedings Article | 19 May 2008 Paper

Paper

Evaluation of defect repair of EUVL mask pattern using FIB-GAE method

Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Ryoji Hagiwara, Kensuke Shiina, Shuichi Kikuchi, Anto Yasaka

Proceedings Volume 7028, 70281T (2008) https://doi.org/10.1117/12.793071

KEYWORDS: Etching, Extreme ultraviolet lithography, Photomasks, Scanning electron microscopy, Image processing, Bridges, Reflectivity, Critical dimension metrology, Tantalum, Isotropic etching

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Proceedings Article | 19 May 2008 Paper

Paper

Damage analysis of EUV mask under Ga focused ion beam irradiation

Yasushi Nishiyama, Tsuyoshi Amano, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Tomokazu Kozakai, Syuichi Kikuchi, Kensuke Shiina, Anto Yasaka, Ryoji Hagiwara

Proceedings Volume 7028, 70280J (2008) https://doi.org/10.1117/12.793026

KEYWORDS: Gallium, Reflectivity, Extreme ultraviolet, Photomasks, Silicon, Ions, Chemical species, Absorption, Etching, Ion beams

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Proceedings Article | 20 March 2008 Paper

Paper

Selete's EUV program: progress and challenges

Ichiro Mori, Osamu Suga, Hiroyuki Tanaka, Iwao Nishiyama, Tsuneo Terasawa, Hiroyuki Shigemura, Takao Taguchi, Toshihiko Tanaka, Toshiro Itani

Proceedings Volume 6921, 692102 (2008) https://doi.org/10.1117/12.772625

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Inspection, Particles, Defect inspection, Line width roughness, Contamination control, Reliability

Read Abstract +

Selete launched a development program on EUV lithography and related mask technology in April 2006. The program is based on the concept of "lithography design and integration." It covers a wide range of areas that require further effort to get EUVL ready for volume production and was formulated on the basis that the issues should be considered from a variety of standpoints, such as acceleration of the development of key lithographic components, verification that EUVL is actually suitable for mass production, the construction of mask infrastructure, and the improvement of EUV-specific reliability and productivity. Two exposure tools have been installed as basic infrastructure: the small-field exposure tool (SFET) and the full-field exposure tool (EUV1). The objectives of the SFET installation are acceleration of the development of resist materials and processes, optimization of the mask structure and materials, and the evaluation of the exposure tool technology with regard to such things as imaging performance, stability, and the lifetimes of the optics and source components. The objective of the EUV1 installation is to demonstrate that lithography integration is a viable path to making EUV lithography a practical production technology. We found that the SFET provides both excellent resolution and high tool activity. This high performance helps us to obtain a clear understanding of the current level of EUVL performance and enables us to learn many things that can be fed back into the development program in the beta stage. A 1st static exposure with the EUV1 resolved 30-nm dense and isolated lines and 30-nm holes. The potential resolution was found to be as good as 28 nm. Although progress was made regarding EUV resist sensitivity and LWR, further progress is needed. A tool for analyzing out-gassing in EUV resists was found to facilitate the development of both resist materials and contamination control measures for exposure tools. A prototype full-field actinic inspection system for mask blanks is now under development and should become operational in the 2Q of 2008. A mask protection engineering (MPE) tool was used to show that a dual-pod carrier is very effective in protecting a mask from particles. Mask pattern defect inspection technology using a DUV wavelength of 199 nm and defect repair technology based on an FIB for EUV mask fabrication are also being developed. This work was supported in part by NEDO.

Proceedings Article | 30 October 2007 Paper

Paper

Evaluation of EUVL-mask pattern defect inspection using 199-nm inspection optics

Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Hideaki Hashimoto, Norio Kameya, Shingo Murakami, Nobutaka Kikuiri

Proceedings Volume 6730, 67305J (2007) https://doi.org/10.1117/12.746580

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Opacity, Optical inspection, Reflectivity, Image transmission, Defect inspection, Deep ultraviolet, Scanning electron microscopy

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Proceedings Article | 30 October 2007 Paper

Paper

Repair specification study for half-pitch 32-nm patterns for EUVL

Hajime Aoyama, Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Osamu Suga

Proceedings Volume 6730, 67305L (2007) https://doi.org/10.1117/12.746586

KEYWORDS: Critical dimension metrology, Tantalum, Opacity, Extreme ultraviolet lithography, Photomasks, Refraction, Refractive index, Printing, Etching, Carbon

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Proceedings Article | 15 May 2007 Paper

Paper

Thermal analysis of EUV mask under inspection laser beam irradiation

Yasushi Nishiyama, Tsuyoshi Amano, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga

Proceedings Volume 6607, 66073B (2007) https://doi.org/10.1117/12.729030

KEYWORDS: Silicon, Inspection, Multilayers, Molybdenum, Extreme ultraviolet, Reflectivity, Tantalum, Photomasks, Deep ultraviolet, Laser irradiation

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Proceedings Article | 15 May 2007 Paper

Paper

Evaluation of defect inspection sensitivity using 199-nm inspection optics

Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Hideaki Hashimoto, Shingo Murakami, Nobutaka Kikuiri

Proceedings Volume 6607, 66073F (2007) https://doi.org/10.1117/12.729034

KEYWORDS: Inspection, Opacity, Photomasks, Extreme ultraviolet lithography, Optical inspection, Defect inspection, Reflectivity, Scanning electron microscopy, Deep ultraviolet, Defect detection

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Proceedings Article | 18 December 1998 Paper

Paper

Inspection of OPC reticle for 0.18-um-rule devices

Akihiko Ando, Yoji Tono-oka, Hiroyuki Shigemura, Haruo Iwasaki, Hiroyoshi Tanabe

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332835

KEYWORDS: Reticles, Inspection, Optical proximity correction, Semiconducting wafers, Defect detection, Defect inspection, Scanners, Lithium, Wafer-level optics, Optical calibration

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Proceedings Article | 1 September 1998 Paper

Paper

Subresolution assist feature masks for 0.2-um window pattern formation

Tadao Yasuzato, Shinji Ishida, Hiroyoshi Tanabe, Akihiko Andou, Tatuya Kamata, Yoji Tonooka, Hiroyuki Shigemura

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328824

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Critical dimension metrology, Lithography, Dry etching, Excimer lasers, Defect detection, Photography, Manufacturing

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Showing 5 of 27 publications

Conference Committee Involvement (3)

Photomask Japan 2011

13 April 2011 | Yokohama, Japan

Photomask and Next Generation Lithography Mask Technology XIV

17 April 2007 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XIII

18 April 2006 | Yokohama, Japan

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