Mr. Hitoshi Takane Profile

Hitoshi Takane

at Kyoto University

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Proceedings Article | 16 March 2023 Presentation + Paper

Development of a novel rutile-type SnO2-GeO2-SiO2 alloy system

Hitoshi Takane, Yuichi Ota, Takeru Wakamatsu, Tsutomu Araki, Katsuhisa Tanaka, Kentaro Kaneko

Proceedings Volume 12422, 124220I (2023) https://doi.org/10.1117/12.2661305

KEYWORDS: Alloys, Germanium, Thin films, Oxides, Electrical properties

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We present a novel ultra-wide bandgap alloy system based on rutile-structured oxides (SnO₂-GeO₂-SiO₂), and clearly show their superior points from a point of view of both experiments and first-principles calculations. Experimentally, we demonstrate that mist-CVD method is effective for the fabrication of r-Ge_xSn_1−xO₂ alloy films. The r-Ge_xSn_1−xO₂ alloy films (x≤0.96) are composed of single-crystalline compounds, while phase separation is found in the r-GeO₂ films. The lattice parameters of r-GexSn1−xO2 alloy films decrease with an increase in fraction of Ge. Additionally, the bandgaps increase as the fraction of Ge increases. The compositional dependence of lattice parameters and bandgaps determined experimentally for the r-Ge_xSn_1−xO₂ alloy films is in good agreement with those derived by the calculations. Our measurements of electrical properties indicate that the r-Ge_xSn_1−xO₂ (x≤0.57) films are n-type semiconductors. Finally, we suggest band alignments calculated for r-Ge_xSn_1−xO2 and r-GexSi_1−xO₂ alloys. The results suggest a possibility of p-type doping in r-GeO2 and highly Ge-rich r-GexSn_1−xO₂. It is also suggested that it is preferable to use r-SiO₂ and highly Si-rich r-Ge_xSi_1−xO₂ as a blocking layer for other rutile-structured devices.

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