High-resolution terahertz (THz) heterodyne spectroscopy is an important technique in astronomy. So far frequencies above 2.5 THz could not be accessed by this technique because of the lack of a suitable local oscillator. A novel local oscillator based on a THz quantum-cascade laser allows for the observation of the fine-structure line of neutral atomic oxygen at 4.7448 THz. The local oscillator has been implemented in the GREAT (German REceiver for Astronomy at Terahertz frequencies) spectrometer on SOFIA, the Stratospheric Observatory for Infrared Astronomy. The design and the performance of the local oscillator will be presented.
We investigated the multi-mode operation of long-cavity terahertz quantum-cascade lasers (l ≥ 7.5 mm). For QCLs based on an active region design with longitudinal optical (LO) phonon transitions, emission with 30–40 strong modes in a range of more than 270 GHz (9 cm-1) is observed. For certain operating conditions, we found evidence for stable frequency comb operation, which has been further proven by a self-mixing technique. In general, the multimode dynamics is characterized by a complex alternation of broad- and narrow-beat note regimes for these devices. In contrast, only a single narrow-beat note regime was observed for a different long-cavity device based on a bound-to-continuum active region, for which the emission comb spans only 33 GHz (1.1 cm-1). We further report a technique based on a tunable bandpass filter to confirm the presence of weak emission modes in the periphery of THz combs, which allowed for the unambiguous detection of modes within a dynamic range of 35 dB. We found that the 35-dB width of the comb can exceed the 20-dB width by a factor of two.
GaN nanowires form spontaneously on a wide variety of substrates without suffering from extended defects.
However, their quasi-one-dimensional nature causes these structures to have an extended free surface, resulting
in a surface-to-volume ratio orders of magnitude larger than that of a planar layer. Additionally, the high nucleation
density of spontaneously formed GaN nanowire ensembles results in an unintentional, but inevitable
coalescence between individual nanowires. In this work, we investigate the impact of both the surface and
the coalescence of nanowires on the recombination dynamics of excitons in GaN nanowire ensembles. Using
simple models to simulate the change in recombination dynamics of bound excitons in GaN NWs with varying
diameter and coalescence degree, we show that the comparatively short decay times at low temperatures are
not generally caused by either of these mechanisms. Furthermore, we demonstrate that the biexponential decay
for the donor-bound exciton is also not related to a coexistence of nonradiative and radiative recombination
channels, but originates from a coupling of the donor- and acceptor-bound exciton states in the GaN NWs.
Heterodyne spectroscopy of molecular rotational lines and atomic fine-structure lines is a powerful tool in astronomy and
planetary research. One example is the OI fine structure line at 4.7 THz. This is a main target for the observation with
GREAT, the German Receiver for Astronomy at Terahertz Frequencies, which will be operated on board of SOFIA. We
report on the development of a compact, easy-to-use source, which combines a quantum-cascade laser (QCL) with a compact,
low-input-power Stirling cooler. This work is part of the local-oscillator development for GREAT/SOFIA. The QCL, which is
based on a two-miniband design, has been developed for high output power and low electrical pump power. Efficient carrier
injection is achieved by resonant longitudinal optical phonon scattering. The amount of generated heat complies with the
cooling capacity of the Stirling cooler. The whole system weighs less than 15 kg including cooler, power supplies etc. The
output power is above 1 mW. With an appropriate optical beam shaping, the emission profile of the laser becomes a
fundamental Gaussian one. Sub-MHz frequency accuracy can be achieved by locking the emission of the QCL to a molecular
resonance.
The physical processes of quantum-cascade structures (QCSs) and the lasing properties of quantum-cascade lasers (QCLs) have been investigated by current-voltage characteristics, interband photoluminescence (PL) spectroscopy, and intraband infrared spectroscopy. Undoped QCSs with 20 periods as well as complete QCLs with 30 periods based on GaAs/Al0.33Ga0.67As have been fabricated by molecular-beam epitaxy. The population of
both the lower and upper laser level can be directly observed by interband PL above a critical field strength in undoped QCSs, which are photo-excited only in the GaAs contact layers. This occupation of the laser levels is correlated with a negative differential conductance in the dark I-V characteristic at this critical field strength. The PL line of the upper laser level is split into two lines, originating from the resonant coupling of the upper laser level with the injector level. The lasing properties of a set of complete QCLs have been investigated as a function of the injector doping density between 3.5 and 10×1011 cm-2. The intermediately doped QCLs with a doping density of about 6×1011 cm-2 exhibit a maximum in the lasing energy, maximum operating temperature, and characteristic temperature parameter, while the threshold current density becomes minimal. For all other QCLs, the threshold current density increases, which is correlated with a decrease in the lasing energy. The frequency dependence of the absorption of free carriers mainly in the waveguides essentially determines the increase of the threshold current density with decreasing lasing energy.
Temporal characteristics of the carriers recombination were investigated in different types of GaAs/AlAs superlattices by the time-resolved photoluminescence spectroscopy. The peculiarities of the electron-hole transitions were established for the superlattices studied in the dependence of the superlattice type and the width of quantum well and barrier layers. In particular, the conditions of existence of free and localized on the interface roughness excitons were found.
Unique polarization properties of the exciton luminescence in semiconductor superlattices (SL) are the subject of a great current interest. Polarization effects in SLs may be caused by different mechanisms, such as formation of twodimensional subbands, exciton localization, existence ofthe microreliefat heterointerfaces, etc. [1-3]. We have investigated the polarization properties ofthe photoluxriinescence (PL) spectra of GaAs-AlAs superlatlices in a wide range ofquantum well and barrier widths. The sample parameters, i.e. well width d, the barrier width d, the number ofperiods N, the type of SL, and the corresponding degrees oflinear polarization are listed in table 1. In both direct-gap SLs-I (d <4 n.tn) and indirect-gap SLs-II (d <4 nm) the polarization of PL lines is caused by the splitting of heavy and light hole bands and the anisotropy ofheavy holes, but this effect alone cannot explain the polarization ofthe luminescence irradiated in the direction normal to the surface of investigated structure (i.e. at small detection angles). For SLs-I we have observed rather large linear polarization PL=(I-I)/(I.,+IS), where I and I are the intensifies of exciton luminescence polarized in the plane ofdetection and normal to it. In this case polanzation may achieve values ofabout 20%. In SLs-II with narrow wells photoluminescence is caused by indirect exciton transitions between X-electrons of AlAs and r -heavy holes of GaAs. It is known that such excitons are localized at interface inhomogeneities [4]. The value of P1 for these SLs is lower than for the SLs-I (L=5-1° %). We have studied the dependence ofpolarization degree on the angle of PL detection for SL—II with the well width 3.4 run and barrier width 4.0 nm for two cases of crystallographic directions ([1 10] and [1 1 0]). The parameters of such samples were close to the case when direct —indirect crossover is observed. As a consequence of this fact two lines were observed in PL spectrum, one of which is associated with indirect recombination of X-electrons and another with direct recombination of F-electrons. r-Iine is almost unpolarized (L'1)' while X-line is characterized by rather large polarization degree (up to 10%), which decreases with the increase ofdetection angle and changes its sign (for small detection angles) with the 90°-turn of the sample around the axis normal to its surface. This anomalous behavior requires an adequate theoretical explanation. From our point ofview such explanation may be given if the existence of heterointerface corrugations in superlattice is taken into account. At the same time the fact ofsmall broadening of observed PL line (substantially lower than possible line splitting due to monolayer fluctuations in quantum well width) proves a strong correlation between such corrugations on both sides ofeach quantum well, i.e. the shape of corrugations in heterointerfaces in superlattice is determined by the shape of corrugations on the surface ofthe substrate.
Electroreflectance (ER) and photocurrent spectra of a strongly and a weakly coupled GaAs- AlAs superlattice are investigated in the Wannier-Stark regime. It is shown that both types of spectra can only be described satisfactorily when, in addition to the excitonic transitions of the first heavy and light hole subband with the first conduction subband, band-to-band transition are taken into account. Therefore, a total of four rather just the two excitonic transitions are necessary to fit the experimental ER spectra. Finally, to describe all features in the ER spectra, interferences within the layered structure have to be included.
The electron and hole transport in a triple-barrier resonant tunneling diode are investigated using photoluminescence spectroscopy on a picosecond and nanosecond time scale. Time- resolved populations are created by exciting only the GaAs contact layers on either side of the tunneling structure but luminescence signals are detected from each of the two consisting quantum wells. Under external bias, several alignment conditions are investigated. First, the resonance of the ground state of the accumulation layer with either the narrow or the wide well depending on the bias direction. Second, the alignment of the accumulation layer with both quantum well subbands. For most external biases, the excess photocreated electron density is small with respect to the steady-state injected current density and the transient luminescence reflects the hole population. Both rise and decay of the transient photoluminescence are governed by the hole tunneling rate which increases with increasing bias. The sequential process of tunneling from the first to the second quantum well is apparent from a comparison of the signals in opposite bias direction. In the low current regime, time- resolved electron tunneling manifests, which adds a fast component to the transient luminescence signal.
Steven Smith, Eric Monson, Greg Merritt, Weihong Tan, D. Birnbaum, Zhong-You Shi, Bjorn Thorsrud, C. Harris, Holger Grahn, Klaus Ploog, Roberto Merlin, Bradford Orr, John Langmore, Raoul Kopelman
Biological samples, molecular solids and solid state devices have been investigated by Near- Field Scanning Optical Microscopy (NSOM), Near-Field Optical Spectroscopy, and Near- Field Chemical Sensing. We report here on our progress in applying the NSOM technology to various biological and physical systems. Results demonstrating both spatial and spectral resolution as well as image contrast unique to the near-field technique are presented.
Electroreflectance (ER) spectroscopy has been used to study the influence of an electric field on the optical properties of a strongly coupled GaAs-AlAs superlattice. At certain electric field strengths, anticrossings of the fundamental transitions for heavy- and light-holes are observed, which can be assigned to resonant coupling of the electron wave functions over one, two, and three superlattice periods. The lineshapes of the ER-spectra are discussed for a wide range of temperatures and field strengths.
We have studied the field dependence of the absorption coefficient of three GaAs-AlAs superlattices using a new modulation technique, the wavelength modulated photocurrent spectroscopy. At small applied electric fields we observe transitions corresponding to the edges of the joint miniband density of states between electrons and heavy holes as well as light holes. At intermediate fields Franz-Keldysh oscillations appear at the lower and upper band edges of the heavy and light hole joint miniband. With further increasing electric field these oscillations transform gradually into Wannier-Stark ladder transitions. The experimentally observed features are well reproduced by numerical calculations.
The injection of photoexcited carriers into higher subbands by resonant tunneling in GaAs- AlAs superlattices is directly observed by photoluminescence spectroscopy. For a conduction subband spacing larger than the longitudinal optical phonon energy, the relative occupation of the second subband is much smaller than one. However, if the conduction subband spacing is below the longitudinal optical phonon energy, the relative occupation increases, but so far no intersubband inversion has been detected.
Recent experimental results on the physics of coherent and incoherent resonant tunneling in superlattices
with an electric field perpendicular to the layers are discussed. For the case of weak coupling between
the wells, we observe a decrease of the time constant for electron transport if different subbands of adjacent
wells are at resonance. In this case) transport is incoherent and sequential. This leads to an efficient
population of higher conduction subbands by non-thermal carriers which can be probed by photoluminescence
experiments. For the case of strong inter-well coupling, on the other hand, coherence gives rise to
resonance-induced delocalization phenomena which have been studied by photocurrent spectroscopy.
We report on the investigation of the miniband transport regime in GaAs-AlAs superlattices by electrical
time-of-flight experiments. The temperature dependence of the low-field drift mobility is used to obtain
information about the underlying transport mechanisms. The photocurrent as a function of the applied
field can be fitted over a wide temperature range with a modified Kazarinov-Suris model.
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