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Hongzhou Yan
at Shanghai Institute of Technical Physics
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Publications (1)
Proceedings Article | 13 April 2015 Paper
Study on the relationship of dark current characteristics and materials surface defects of extended wavelength InGaAs photodiodes
Proceedings Volume 9522, 95221X (2015) https://doi.org/10.1117/12.2180244
KEYWORDS: Indium gallium arsenide, Photodiodes, Sensors, Infrared radiation, Metalorganic chemical vapor deposition, Physics, Lithium, Infrared imaging, Temperature metrology, Polarization
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