In view of the memory function of memristor in circuit, a threshold memristor model and a memristor equivalent circuit were established by PSPICE simulation software. A hybrid memristor-CMOS Exclusive-OR(XOR) logic gate circuit was built with the memristor equivalent circuit and CMOS tube as the core. The simulation results verified the correctness and feasibility of the circuit. Then, the memristor equivalent circuit is connected to the real circuit. The test results are the same as the simulation results, which further confirms the feasibility of hybrid memristor-CMOS XOR gate circuit.
KEYWORDS: Resistance, Circuit switching, Computer programming, Voltage controlled current source, Pulse signals, Analog electronics, Signal processing, Field effect transistors, Device simulation, Rectangular pulse
Because the memristor is a kind of nonlinear resistance, its resistance coefficient depends on the total charge q flowing through the element, that is, the output voltage of the memristor to the past time integral determines the resistance value of the device, according to this feature of the element can make the resistance value of the memristor realize programmable calculation, and then improve the performance of the circuit parameters. In this paper, we design a programmable memristor circuit by using a bipolar threshold memristor to realize the adjustable resistance value in the circuit, and apply it to the Schmidt trigger circuit. Through the memristor programming circuit to change the threshold setting voltage value of the Schmidt trigger, to achieve the controllable range of the back error, so as to achieve a better waveform integration effect.
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