EUV Mask for High Volume Manufacturing of semiconductor device have already became accomplished facts. Therefore, developing a flexible and controllable process capability for various film stack EUV blank structure and production is crucial. The requirements of high compatible process window need to sustain 1-nm critical dimensions (CD) control and etch stop on capping layer with zero damage. For conventional EUV blank, dual layer TaN substrate is proposed as state-of-the-art EUV photomask blank absorber material being comprehensively evaluated. Film stack material needs to be co-optimized with developing and etching process to keep pattern profile/fidelity, capping layer quality and durability, and defect density. Hence first of all, the novel etching strategy for mitigating capping layer damage to have better Ru durability improvement will be reported. Secondly, the developing process optimization to lower the defect counts caused by wettability change due to various absorber material will show. Finally, the pattern fidelity change caused by various etching selectivity between hard mask and absorber will be discussed in this paper.
Scatterometry is gaining popularity in recent years as it shows itself as a worthy contender among existing metrology
systems. Scatterometry provides fast, accurate and precise profile information, which is valuable for in-line process
control in production environment. Scatterometry applications widely adopted in IC fabs include poly gate ADI and AEI,
and shallow trench isolation depth measurements. Recently, the mobility enhancement by compressive strain at
source/drain is reported which improves greatly PMOS Idsat. In this work, we extend the application domain of
scatterometry technology to two-dimensional recessed Si profile used in strained source and drain (SSD) structures.
Complexity of SSD structures measurement by scatterometry requires the use of many parameters in modeling, which
hinders a stable library setup. Our approach in circumventing this issue is to identify the most sensitive parameters first
and then further reduce the number of variables through an effective medium approximation (EMA). This paper will
discuss the preparation, experiments, and results of the scatterometry measurements. The extracted data have been
compared with transmission electron microscopy results. Good correlation in depth and profile are observed. In addition,
we have performed repeatability test and fault detection checks and the trend chart indicates that our methodology is
very robust for in-line process monitor.
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