We report the improvement of the electroluminescence (EL) efficiency and the device stability of green organic
light-emitting diodes (OLEDs) by doping 10-(2-benzothiazolyl)-2,3,6,7-tetramethyl-1H,5H,11H-(1)-
benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) in the thin interfacial region of the hole transporting layer of
N,N'-di(1-naphthyl) -N,N'-diphenylbenzidine (α-NPD) in addition to the tris(8-hydroxyquinoline) aluminum (Alq3)
emitting layer. The EL efficiency of 15.7 cd/A is obtained at 10 mA/cm2, which is about 10 % higher than the device
with C545T doped only in the Alq3 layer. In addition, the longer lifetime with very small driving voltage variation
over time is obtained under a constant current driving. This improvement in the efficiency and stability can be
attributed to the combined effect of an additional radiative recombination of electrons with holes in the C545T-doped
α-NPD layer and the reduced transport of holes into the Alq3 emitting layer, thus lowering the generation of unstable
Alq3 cationic species (Alq3+).
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