Mr. Hyunsang Joo Profile

Hyunsang Joo

Principal Researcher at Kumho Petrochemical Co., Ltd.

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Author

Publications (11)

Proceedings Article | 17 April 2014 Paper

The factors affecting improvement sensitivity, CDU, and resolution in EUV resist

Joonhee Han, Hyun Soon Lim, Jin Ho Kim, Sumi Choi, Jin Bong Shin, Chang Wan Bae, In Young Yoo, Bong Ha Shin, Eun Kyo Lee, Hyun Sang Joo, Dong Chul Seo, Jun Sung Chun

Proceedings Volume 9048, 90482R (2014) https://doi.org/10.1117/12.2046573

KEYWORDS: Polymers, Extreme ultraviolet, Lithography, Polymer thin films, Electroluminescence, Extreme ultraviolet lithography, Palladium, Line width roughness, Diffusion, Scanning electron microscopy

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Proceedings Article | 1 April 2013 Paper

The study of novel PAG containing acid amplifier in EUV resist material

Hyun Sang Joo, Jin Ho Kim, Joon Hee Han, Chang Wan Bae, Jin Bong Shin, Hyun Soon Lim, Seung Duk Cho, Sam Min Kim

Proceedings Volume 8679, 86792Z (2013) https://doi.org/10.1117/12.2010861

KEYWORDS: Polymers, Extreme ultraviolet, Diffusion, Amplifiers, Line width roughness, Extreme ultraviolet lithography, Semiconducting wafers, Chemical species, Yield improvement, Sodium

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Proceedings Article | 23 March 2012 Paper

The factor affecting LWR and sensitivity in EUV resist material

Joonhee Han, Jin Bong Shin, Yong Hwa Hong, So Jung Park, Hyun Soon Lim, Hyun Sang Joo, Sam Min Kim, Dong Chul Seo

Proceedings Volume 8322, 83222B (2012) https://doi.org/10.1117/12.916025

KEYWORDS: Line width roughness, Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Diffusion, Electron beam lithography, Lithography, Light sources, Semiconducting wafers, Oxygen

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Proceedings Article | 8 April 2011 Paper

Study of acid diffusion of anionic or cationic polymer bound PAG

Jin Bong Shin, Hyun Sang Joo, Seung Duk Cho, Hyun Soon Lim, Jin Ho Kim, Seung Jae Lee, Dae Hyeon Shin, JoonHee Han, Dong Chul Seo

Proceedings Volume 7969, 79692N (2011) https://doi.org/10.1117/12.870702

KEYWORDS: Diffusion, Polymers, Line edge roughness, Extreme ultraviolet, Photoresist materials, Semiconducting wafers, Edge roughness, Extreme ultraviolet lithography, Lithography, Silicon

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Proceedings Article | 4 December 2008 Paper

The noble resists composed of cationic and anionic polymerizable PAGs

Jung Hoon Oh, Dong Chul Seo, Hyun Sang Joo, Sung Do Jung, Jin Ho Kim, Seung Jae Lee, Ran Ra Park, JoonHee Han, Joo Hyeon Park

Proceedings Volume 7140, 714031 (2008) https://doi.org/10.1117/12.804631

KEYWORDS: Polymers, Polymerization, Lithography, Diffusion, Extreme ultraviolet, Glasses, Photoresist materials, Sodium, Line edge roughness, Etching

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Proceedings Article | 29 March 2006 Paper

Correlation between polymer platform of ArF photoresist and defect in the track nozzle of manufacturing process line

Ji Young Song, Dong Chul Seo, Seung Duk Cho, Hyun Sang Joo, Kyoung Mun Kim, Hyun Soon Lim, Sang Jin Kim, Joo Hyeon Park, Jae Chang Jung, Sung Koo Lee, Chul Kyu Bok, Seung Chan Moon

Proceedings Volume 6153, 61533G (2006) https://doi.org/10.1117/12.657072

KEYWORDS: Polymers, Particles, Solids, Coating, Semiconducting wafers, Contamination, Excimer lasers, Monochromatic aberrations, Lithography, Photoresist materials

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As the minimum feature size of electronic devices continues to shrink, the industry is moving from wavelength of 248-nm KrF excimer laser sources to shorter wavelength of 193-nrn ArF excimer laser and ArF immersion to achieve required higher resolution. As minimum feature sizes are reduced, the ability to minimize defects is getting more important, because they have a close connection with yield. With the replacement of laser source, 248-nm with 193-nm, the platform of polymer was also converted from phenolic polymer into acrylic polymer. With this platform changes unexpected various defect problems had been occurred. Although KrF process causes not much of defect, ArF process causes more serious defect problems. One of those major defect source is solidification of polymer in track nozzle. The solidified polymer at track nozzle needs to be removed periodically, unless it causes significant throughput loss in mass production. The amount of this type of defect relies on physical properties of polymer platform such as hydrophilicity, solubility or structural rigidity. The hydrophilic phenol based KrF polymer shows minor defects, contrarily hydrophobic acryl based ArF polymer causes serious defects. The solidification of acrylate type polymer was caused by poor solubility. In order to improve solubility, olefinic moieties such as norbornylene, norbornyl devertives and opened maleic anhydride monomers were adopted in acrylate polymer. Those inserted olefins and opened maleic anhydride in acrylic polymer changed overall structure such as rigid helix structure into flexible structure. With the increase of solubility, particle defect was dramatically reduced. Conclusively, insertion of cycloolefin and opened maleic anhydride moiety releases rigid acrylic structure and it improves solubility. As solubility improves, crystallization at nozzle has been decreased and the particle defect is reduced. Moreover this flexible structure allows the resist reflow at the moderate temperature which is one of the resolution enhancement techniques.

Proceedings Article | 4 May 2005 Paper

Cycloolefin copolymer containing hindered hydroxyl group for 193nm photoresist

Seung Duk Cho, Hyun Sang Joo, Dong Chul Seo, Ji Young Song, Kyoung Mun Kim, Joo Hyeon Park, Jae Chang Jung, Sung Koo Lee, Cheol Kyu Bok, Seung Chan Moon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599443

KEYWORDS: Polymers, Photoresist materials, Etching, Resistance, Adhesives, Electroluminescence, Dry etching, Critical dimension metrology, Photomasks, Glasses

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Proceedings Article | 14 May 2004 Paper

High-performance 193nm photoresist materials based on ROMA polymers: sub-90nm contact hole application with resist reflow

Hyun Joo, Dong Seo, Chang Kim, Young Lim, Seong Cho, Jong Lee, Ji Song, Kyoung Kim, Joo Park, Jae Chang Jung, Ki Shin, Cheol Kyu Bok, Seung Moon

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535117

KEYWORDS: Polymers, Etching, Lithography, Resistance, Glasses, Photoresist processing, Monochromatic aberrations, Electroluminescence, Optical lithography, Dry etching

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Proceedings Article | 12 June 2003 Paper

Ring-opened maleic anhydride and norbornene copolymers (ROMA) have a good character resist flow process for 193-nm resist technology

Hyun-Sang Joo, Dong Chul Seo, Chang Min Kim, Young Taek Lim, Seong Duk Cho, Jong Lee, Hyun Jeon, Joo Park, Jae Jung, Ki Shin, Chul Kyu Bok, Seung-Chan Moon

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485209

KEYWORDS: Polymers, Photoresist processing, Lithography, 193nm lithography, Semiconducting wafers, Ultraviolet radiation, Monochromatic aberrations, Polymerization, Etching, Scanning electron microscopy

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Proceedings Article | 24 July 2002 Paper

Novel approach for high resolution using cycloolefin-alt-maleic acid derivatives polymer for ArF lithography

Jong-Bum Lee, Joo Hyeon Park, Dong-Chul Seo, Chang-Min Kim, Young Lim, Seung-duk Cho, Hyun-Sang Joo, Hyun Jeon, Seong-Ju Kim

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474202

KEYWORDS: Polymers, Monochromatic aberrations, Etching, Resistance, Lithography, Transmittance, Ultraviolet radiation, Raw materials, Scanning electron microscopy, Transparency

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Proceedings Article | 24 July 2002 Paper

New approach for 193-nm resist using modified cycloolefin resin

Joo Hyeon Park, Dong-Chul Seo, Chang-Min Kim, Young Lim, Seong Jo, Jong-Bum Lee, Hyeon Joo, Hyun Jeon, Seong-Ju Kim, Jae Chang Jung, Ki-Soo Shin, Keun-Kyu Kong, Tatsuya Yamada

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474209

KEYWORDS: Polymers, Etching, Monochromatic aberrations, Transmittance, Resistance, 193nm lithography, Lithography, Photoresist materials, Silicon, Semiconducting wafers

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Showing 5 of 11 publications

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