Dr. Ivan Eliashevich Profile

Dr. Ivan Eliashevich

SPIE Involvement:

Author

Proceedings Article | 28 February 2008 Paper

Progress in GaN devices performances and reliability

P. Saunier, C. Lee, J. Jimenez, A. Balistreri, D. Dumka, H. Tserng, M. Kao, U. Chowdhury, P. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, M. Shur

Proceedings Volume 6894, 68941I (2008) https://doi.org/10.1117/12.765467

KEYWORDS: Reliability, Gallium nitride, Silicon carbide, Defense technologies, Piezoelectric effects, Semiconducting wafers, Gallium, Semiconductors, Gallium arsenide, Group II-VI semiconductors

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Proceedings Article | 26 January 2004 Paper

Fabrication of high-lumen InGaN flip chip LEDs

Hari Venugopalan, Xiang Gao, Tingting Zhang, Bryan Shelton, Anthony DiCarlo, Ivan Eliashevich, Michael Hsing

Proceedings Volume 5187, (2004) https://doi.org/10.1117/12.514073

KEYWORDS: Light emitting diodes, Indium gallium nitride, Resistance, Silver, Lamps, Reliability, Metals, Packaging, Aluminum, Annealing

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Proceedings Article | 3 July 2003 Paper

Ultraviolet nitride LED fabrication for high-flux white LED

Hari Venugopalan, Anthony DiCarlo, Xiang Gao, Sebastien Libon, Bryan Shelton, Emil Stefanov, Tingting Zhang, Ivan Eliashevich, Stan Weaver, Michael Hsing, Boris Kolodin, Tom Soules, Doru Florescu, Shiping Guo, Milan Pophristic, Boris Peres

Proceedings Volume 4996, (2003) https://doi.org/10.1117/12.486359

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Lamps, Sapphire, Ultraviolet light emitting diodes, Aluminum, Silicon carbide, Silver, Annealing, Absorption

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Proceedings Article | 26 November 2002 Paper

Nitride LED chip separation technologies

Bryan Shelton, Anthony DiCarlo, Emil Stefanov, Ivan Eliashevich

Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.457158

KEYWORDS: Light emitting diodes, Laser applications, Sapphire, Crystals, Laser optics, Solid state lighting, Gallium, Standards development, Laser ablation, Laser crystals

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Proceedings Article | 26 November 2002 Paper

Optimizing the external light extraction of nitride LEDs

Emil Stefanov, Bryan Shelton, Hari Venugopalan, Tingting Zhang, Ivan Eliashevich

Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.457208

KEYWORDS: Light emitting diodes, Sapphire, Interfaces, Reflectivity, Data modeling, Semiconducting wafers, Reflection, Ray tracing, Refractive index, Surface finishing

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Proceedings Article | 17 April 2000 Paper

InGaAlP and InGaN light-emitting diodes: high-power performance and reliability

Ivan Eliashevich, Jean-Philippe Debray, Chuong Tran, Hari Venugopalan, Robert Karlicek

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382815

KEYWORDS: Light emitting diodes, Indium gallium nitride, Reliability, Visible radiation, Aluminium gallium indium phosphide, Metals, Diodes, Resistance, Light sources and illumination, Luminous efficiency

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Proceedings Article | 14 April 1999 Paper

Growth of InGaAlP HB-LEDs in a large-scale-production reactor

Sherman Li, D. Collins, S. Vatanapradit, M. Ferreira, Peter Zawadzki, Richard Stall, Ivan Eliashevich, J. Nering

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344469

KEYWORDS: Light emitting diodes, Semiconducting wafers, Aluminum, Manufacturing, Aluminium gallium indium phosphide, Doping, Reflectivity, Metalorganic chemical vapor deposition, Magnesium, Gallium arsenide

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Proceedings Article | 14 April 1999 Paper

InGaN blue light-emitting diodes with optimized n-GaN layer

Ivan Eliashevich, Yuxin Li, Andrei Osinsky, Chuong Tran, Michael Brown, Robert Karlicek

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344483

KEYWORDS: Light emitting diodes, Gallium nitride, Resistance, Doping, Indium gallium nitride, Semiconducting wafers, Reliability, Diodes, Blue light emitting diodes, Metals

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Proceedings Article | 14 April 1999 Paper

Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors

Chuong Tran, Robert Karlicek, Michael Brown, Ivan Eliashevich, Alexander Gurary, Richard Stall

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344487

KEYWORDS: Light emitting diodes, Indium, Indium gallium nitride, Gallium nitride, Semiconducting wafers, Metalorganic chemical vapor deposition, Green light emitting diodes, Reflectivity, Manufacturing, Reflectance spectroscopy

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Proceedings Article | 19 August 1998 Paper

Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers

Lijun Wang, Sheng Li Wu, Yun Liu, Yongqiang Ning, Jacqueline Diaz, Ivan Eliashevich, Hyuk Yi, Manijeh Razeghi

Proceedings Volume 3547, (1998) https://doi.org/10.1117/12.319596

KEYWORDS: Quantum wells, High power lasers, Continuous wave operation, Gallium arsenide, Heterojunctions, Mirrors, Coating, Semiconductor lasers, Laser damage threshold, Cladding

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Proceedings Article | 7 April 1998 Paper

Fabrication and characterization of GaN-based blue light-emitting diodes

Yuxin Li, Michael Brown, Ivan Eliashevich, T. DiCarlo, Chuong Tran, Robert Karlicek, Richard Stall, L. Koszi, Yu Lu, Hongen Shen

Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304416

KEYWORDS: Light emitting diodes, Gallium nitride, Indium gallium nitride, Temperature metrology, Electroluminescence, Quantum wells, Blue light emitting diodes, Ultraviolet radiation, Excitons, Electrons

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Proceedings Article | 24 September 1996 Paper

Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

Lijun Wang, Sheng Li Wu, Jacqueline Diaz, Ivan Eliashevich, Hyuk Yi, Manijeh Razeghi

Proceedings Volume 2886, (1996) https://doi.org/10.1117/12.251910

KEYWORDS: Quantum efficiency, Quantum wells, High power lasers, External quantum efficiency, Laser damage threshold, Internal quantum efficiency, Continuous wave operation, Temperature metrology, Lithium, Heterojunctions

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Proceedings Article | 24 April 1995 Paper

Investigation of 0.8-um InGaAsP-GaAs laser diodes with multiple quantum wells

Jacqueline Diaz, Hyuk Yi, Seongsin Kim, Matthew Erdtmann, Lewis Wang, Ivan Eliashevich, Erwan Bigan, Manijeh Razeghi

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206931

KEYWORDS: Quantum wells, Semiconductor lasers, High power lasers, Waveguides, Cladding, Nd:YAG lasers, Continuous wave operation, Heterojunctions, Solid state lasers, Gallium arsenide

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Showing 5 of 13 publications

Conference Committee Involvement (5)

Seventh International Conference on Solid State Lighting

27 August 2007 | San Diego, California, United States

Sixth International Conference on Solid State Lighting

14 August 2006 | San Diego, California, United States

Fifth International Conference on Solid State Lighting

1 August 2005 | San Diego, California, United States

Fourth International Conference on Solid State Lighting

3 August 2004 | Denver, Colorado, United States

Third International Conference on Solid State Lighting

5 August 2003 | San Diego, California, United States

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