Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.
Future generations of flexible, transparent electronics require the use of polymer based thin-film transistors (TFTs) with high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. Systematic studies were performed to optimize the thickness and composition of the active and dielectric layers. Different electrode materials were tested along with “top” and “bottom” device configurations. Various coating techniques (SAM) were applied to achieve a higher degree of order in polymer chains of semi-conducting layer. Results demonstrate the influence of the mentioned factors on the TFT performance, including increase of mobility and on/off ratio.
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