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Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm
In this paper, diode lasers with customized designs according to the spectral requirements of the applications will be presented. As basis for all devices, Y-branch diode lasers with an integrated grating for wavelength stabilization are realized. The emission of the two branches is combined in an implemented Y-shaped coupler. The bent waveguides are sine shaped S-bends. The spectral tuning is performed via implemented heater elements next to the Distributed Bragg Reflector (DBR) gratings or via the injection current when using a Distributed Feedback (DFB) grating. Powervoltage current characteristics, spectral and tuning properties will be shown.
The devices emitting at 671 nm and 785 nm are used for SERDS, whereas devices at 965 nm were tested as seed sources for pulsed master oscillator power amplifiers (MOPA) suitable for the detection of water vapor. Devices at 785 nm are also suitable for the generation of THz radiation using difference frequency generation. A widely tunable Y-branch diode laser near 972 nm is used for the sum frequency generation in an up-conversion system.
The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.
The monolithic devices reach output powers up to 215 mW with emission widths of about 20 pm. At 200 mW the conversion efficiency is 20%, i.e. the electrical power consumption is only 1 W. The spectral distance between the two laser cavities is about 0.6 nm, i.e. 10 cm-1 as targeted. The side mode suppression ratio is better than 50 dB. Amplifying these devices using a ridge waveguide amplifier an output power of about 750 mW could be achieved maintaining the spectral properties of the master oscillator.
Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses.
In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M2lat ~ 1.1 and M2ver ~ 1.2 up to 4 W pulse power.
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