Copper-indium-selenide (CISe) was directly grown on n-type silicon epilayer for the photodetector application. By employing low bandgap p-CISe as the photo-absorption layer, the cut-off wavelength of the photodetector can be extended to 1309 nm, that is far longer than the cut-off wavelength (1100 nm) of Si-based photodetectors. Even though the 1550-nm-based light detection and ranging (LiDAR) system is popular for its eye-safe properties compared to the conventional 908-nm-based LiDAR system, it experiences performance degradation under heavy rain and fog. The photodetectors responsive to 1300-nm-light are interesting because 1300-nm-based LiDAR system is less vulnerable to water absorption than 1550-nm-based system and is safer to human eye than 908-nm-based system. Furthermore, p-CISe/Si heterostructure enables the monolithic integration of near-infrared photodetector with Si-based readout circuit.
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