We discuss the fabrication and characterization of flexible piezoelectric motion sensors (PMSs) with single-electrode (SE) configuration. As a response medium of the devices, InN nanowires (NWs), formed on Si(111) substrates by a plasma-assisted molecular beam epitaxy, were used. For comparison, the PMSs with two electrodes (TEs) were prepared. The performances of the PMSs were analyzed depending on device parameters such as bending frequency, operation time, relative humidity, and bending cycle. For example, the output voltage of the SE-PMS with the InN NWs aligned along the bending direction was measured to be 10.65 V, which is higher than that (7.1 V) of the TE device. To evaluate the possibility for real-life applications, the flexible PMSs were attached to a human finger and their output signals were measured depending on the movement angle.
We discuss the device performances of triboelectric pressure sensors (TEPSs) using GaN nanowires (NWs) as a response medium. TEPSs were fabricated by stacking polydimethylsiloxane directly on GaN NWs formed on Si(111) and forming an electrode underneath the substrate. When hammering the TEPS with a finger, the output voltage was measured to be 14.7 V, which is 2.5 times higher than that (5.9 V) of the TEPS without GaN NWs. The output voltage of TEPSs rarely changed even after the 100-cyclic measurements. These results will be discussed using an analytical model with the spatial electrostatic induction of GaN NWs.
This conference presentation was prepared for the Infrared Sensors, Devices, and Applications XII conference at SPIE Optical Engineering + Applications, 2022.
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